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Semiconductor processing system with gas curtain 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/68
  • B65G-049/07
출원번호 US-0729550 (1996-10-11)
발명자 / 주소
  • Goodwin Dennis L.
  • Hawkins Mark R.
  • Crabb Richard
  • Doley Allan D.
출원인 / 주소
  • Advanced Semiconductor Materials America, Inc.
대리인 / 주소
    Knobbe, Martens, Olson & Bear LLP
인용정보 피인용 횟수 : 131  인용 특허 : 39

초록

A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, t

대표청구항

[ What is claimed is:] [1.] A gas curtain apparatus for a wafer processing system, the system including a handling chamber and a reaction chamber with a delivery port therebetween having an isolation valve adapted for alternately opening and closing the port, comprising:a first series of apertures i

이 특허에 인용된 특허 (39)

  1. Carlson David K. (Santa Clara CA) Riley Norma B. (Pleasanton CA), Apparatus for servicing vacuum chamber using non-reactive gas filled maintenance enclosure.
  2. Wollmann Andrew F. (Chandler AZ), Cantilever diffusion tube apparatus and method.
  3. Philipossian Ara (Stoneham MA), Conical gas inlet for thermal processing furnace.
  4. Anderson Roger Norman (Garland TX), Continuous chemical vapor deposition reactor.
  5. Boys Donald R. (Cupertino CA) Graves Walter E. (San Jose CA), Disk or wafer handling and coating system.
  6. Garric George (Perthes FRX) Lafond Andr (Nemours FRX), Dispatching apparatus with a gas supply distribution system for handling and storing pressurized sealable transportable.
  7. Gattuso David A. (Pontiac MI), External isolation module.
  8. Garric George (Perthes FRX) Lafond Andr (Nemours FRX), Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transpo.
  9. Ishii Kaoru (Garland TX) Wilkinson Thomas F. (Garland TX), Gas flow systems in CCVD reactors.
  10. Wilkinson Thomas F. (Garland TX), Gas seal for continuous chemical vapor deposition reactors.
  11. Fujioka Yasushi (Hikone JPX) Kurokawa Takashi (Kawasaki JPX) Kanai Masahiro (Hikone JPX) Sano Masafumi (Nagahama JPX) Yoshino Takehito (Nagahama JPX) Kohda Yuzo (Nagahama JPX), Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers.
  12. Doehler Joachim (Union Lake MI) Gattuso David A. (Pontiac MI) Hoffman Kevin R. (Sterling Heights MI), Grooved gas gate.
  13. Doehler, Joachim; Gattuso, David A.; Hoffman, Kevin R., Grooved gas gate.
  14. Nakagawa Keiji (Kadoma JPX) Nakatani Ikuyoshi (Hazukashi JPX) Sakai Takamasa (Kusatsu JPX) Muraoka Yusuke (Osaka JPX), Heat processing apparatus for semiconductor manufacturing.
  15. Robinson McDonald (Paradise Valley AZ) Ozias Albert E. (Aumsville OR), Heating system for reaction chamber of chemical vapor deposition equipment.
  16. Roy Sudipto R. (Dallas County TX) Glynn Phil (McKinney TX), Horizontal reactor hardware design.
  17. Philipossian Ara (Stoneham MA), Inert gas curtain for a thermal processing furnace.
  18. Suwa Hidenori (Zushi JPX) Ono Shinichi (Chigasaki JPX) Hirano Hiroyuki (Hiratsuka JPX) Naruse Humio (Yokohama JPX), Loading and unloading airlock apparatus for a vacuum treatment chamber.
  19. Lorimer D\Arcy H. (Pismo Beach CA), Low particulate slit valve system and method for controlling same.
  20. Doehler Joachim (Union Lake MI), Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or press.
  21. Nath, Prem; Hoffman, Kevin R.; Laarman, Timothy D., Method for introducing sweep gases into a glow discharge deposition apparatus.
  22. Crabb Richard (Mesa AZ) Robinson McDonald (Paradise Valley AZ) Hawkins Mark R. (Mesa AZ) Goodwin Dennis L. (Tempe AZ) Ferro Armand P. (Scottsdale AZ), Method for loading a substrate into a GVD apparatus.
  23. Carlson David K. (Santa Clara CA) Riley Norma B. (Pleasanton CA), Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure.
  24. Yamabe Kikuo (Yokohama JPX) Okumura Katsuya (Yokohama JPX), Method of thermally processing semiconductor wafers and an apparatus therefor.
  25. Cannella Vincent D. (Detroit MI) Izu Masatsugu (Birmingham MI) Hudgens Stephen J. (Southfield MI), Multiple chamber deposition and isolation system and method.
  26. Maher Joseph A. (South Hamilton MA) Vowles E. John (Goffstown NH) Napoli Joseph D. (Winham NH) Zafiropoulo Arthur W. (Manchester MA) Miller Mark W. (Burlington MA), Multiple-processing and contamination-free plasma etching system.
  27. Garric George (Perthes FRX) Lafond Andr (Nemours FRX), Pressurized interface apparatus for transferring a semiconductor wafer between a pressurized sealable transportable cont.
  28. Garric George (Perthes FRX) Lafond Andr (Nemours FRX), Pressurized sealable transportable containers for storing a semiconductor wafer in a protective gaseous environment.
  29. Tsutahara Koichiro (Hyogo JPX) Yamaguchi Toru (Hyogo JPX) Ejima Taizo (Fukuoka JPX) Minami Toshihiko (Fukuoka JPX) Kawata Yoshinobu (Fukuoka JPX), Reaction chamber for a chemical vapor deposition apparatus and a chemical vapor deposition apparatus using such a reacti.
  30. deBoer Wiebe B. (Kromme Molenweg 10 5521 GB Eersel OR NLX) Ozias Albert E. (7515 Poet Rd. ; S.E. Aumsville OR 97325), Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment.
  31. Komatsuzaki Yasuo (Ibaraki JPX), Semiconductor heat-treating apparatus.
  32. Whang, J. S.; Wollmann, Andrew F., Slotted cantilever diffusion tube system and method and apparatus for loading.
  33. Wilkinson Thomas F. (Garland TX), Support and seal structure for CCVD reactor.
  34. Yang Chang-jip (Kyungki-do KRX) Ryu Kyu-bok (Kyungki-do KRX) An Jung-soo (Kyungki-do KRX) An Jun-geen (Kyungki-do KRX), Tube apparatus for manufacturing semiconductor device.
  35. Kakehi Yutaka (Hikari JPX) Nakazato Norio (Kudamatsu JPX) Fukushima Yoshimasa (Hikari JPX) Shibata Fumio (Kudamatsu JPX) Tsubone Tsunehiko (Kudamatsu JPX) Kanai Norio (Kudamatsu JPX), Vacuum processing unit and apparatus.
  36. Carrico Philip H. (Greenfield Center NY), Vapor nozzle with gas barrier bars.
  37. Olsen ; Gregory Hammond ; Zamerowski ; Thomas Joseph ; Buiocchi ; Char les Joseph, Vapor phase growth technique of III-V compounds utilizing a preheating step.
  38. Takanabe Eiichiro (Sagamihara JPX) Suzuki Takeo (Iruma JPX) Noguchi Tadataka (Kitakyushu JPX), Vertical heat-treating apparatus and heat-treating process by using the vertical heat-treating apparatus.
  39. Goodwin Dennis L. (Tempe AZ) Crabb Richard (Mesa AZ) Robinson McDonald (Paradise Valley AZ) Ferro Armand P. (Scottsdale AZ), Wafer handling system with Bernoulli pick-up.

이 특허를 인용한 특허 (131)

  1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.
  2. Gealy, Dan; Weimer, Ronald A., Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers.
  3. Carpenter,Craig M.; Mardian,Allen P.; Dando,Ross S.; Tschepen,Kimberly R.; Derderian,Garo J., Apparatus and method for depositing materials onto microelectronic workpieces.
  4. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.
  5. Lin, Mu-Tsang; Lin, Yu-Lun; Chuang, Yao-Fey, Apparatus and method for reducing contamination in a wafer transfer chamber.
  6. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.
  7. Mardian, Allen P.; Rodriguez, Santiago R., Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes.
  8. Derderian,Garo J., Apparatus and methods for plasma vapor deposition processes.
  9. Carpenter,Craig M.; Dando,Ross S.; Mardian,Allen P., Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces.
  10. Omstead, Thomas R.; Levy, Karl B., Atomic layer deposition systems and methods.
  11. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  12. Dando, Ross S.; Carpenter, Craig M.; Campbell, Philip H.; Mardian, Allen P., Chemical vapor deposition apparatus.
  13. Dando,Ross S.; Carpenter,Craig M.; Campbell,Philip H.; Mardian,Allen P., Chemical vapor deposition apparatus.
  14. Dando, Ross S.; Campbell, Philip H.; Carpenter, Craig M.; Mardian, Allen P., Chemical vapor deposition methods.
  15. Marsh, Eugene P.; Atwell, David R., Chemical vaporizer for material deposition systems and associated methods.
  16. Marsh, Eugene P.; Atwell, David R., Chemical vaporizer for material deposition systems and associated methods.
  17. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.
  18. Tan, Yi Chun; Chew, Choo Fooi; Tan, Siewboon; Liew, Lee Chu, Cooling shower plate for disk manufacture.
  19. Derderian, Garo J.; Sandhu, Gurtej S., Deposition methods.
  20. Derderian,Garo J.; Sandhu,Gurtej S., Deposition methods.
  21. Sandhu,Gurtej S.; Derderian,Garo J.; Blalock,Guy T.; Gilton,Terry L., Deposition methods and apparatuses providing surface activation.
  22. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.
  23. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  24. van Kesteren,Tom A., Dummy substrate for thermal reactor.
  25. Deguchi, Nobuyoshi, Exposure apparatus, coating/developing apparatus, method of transferring a substrate, method of producing a device, semiconductor production factory, and method of maintaining an exposure apparatus.
  26. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  27. White, Carl L.; Shero, Eric; Reed, Joe, Gap maintenance for opening to process chamber.
  28. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.
  29. Gochberg, Lawrence A.; Burkhart, Christopher W., Gas-purged vacuum valve.
  30. Gochberg, Lawrence A; Burkhart, Christopher W, Gas-purged vacuum valve.
  31. Gochberg, Lawrence A; Burkhart, Christopher W, Gas-purged vacuum valve.
  32. van Kesteren, Tom A.; Zinger, Jan, Heat treatment apparatus with temperature control system.
  33. Jacobson, Paul; Raaijmakers, Ivo; Aggarwal, Ravinder; Haro, Robert C., High temperature drop-off of a substrate.
  34. Jacobson, Paul; Raaijmakers, Ivo; Aggarwal, Ravinder; Haro, Robert C., High temperature drop-off of a substrate.
  35. Jacobson,Paul; Raaijmakers,Ivo; Aggarwal,Ravinder; Haro,Robert C., High temperature drop-off of a substrate.
  36. Carpenter, Craig M.; Dando, Ross S.; Mardian, Allen P.; Hamer, Kevin T.; Cantin, Raynald B.; Campbell, Philip H.; Tschepen, Kimberly R.; Mercil, Randy W., INTERFACIAL STRUCTURE FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND SUBSTRATE TRANSFER CHAMBERS AND FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND ACCESSORY ATTACHMENTS, AND SEMICONDUCTOR .
  37. Ferro, Armand; Raaijmakers, Ivo; Foster, Derrick, In situ growth of oxide and silicon layers.
  38. Ferro, Armand; Raaijmakers, Ivo; Foster, Derrick, In situ growth of oxide and silicon layers.
  39. Ferro,Armand; Raaijmakers,Ivo; Foster,Derrick, In situ growth of oxide and silicon layers.
  40. Ferro,Armand; Raaijmakers,Ivo; Foster,Derrick, In situ growth of oxide and silicon layers.
  41. Shugrue, John; Moen, Ron, Lockout tagout for semiconductor vacuum valve.
  42. Mercaldi,Garry A., Low selectivity deposition methods.
  43. Mercaldi,Garry A., Low selectivity deposition methods.
  44. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
  45. Pore, Viljami, Method and apparatus for filling a gap.
  46. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
  47. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.
  48. Reed, Joseph C; Shero, Eric J, Method and apparatus for minimizing contamination in semiconductor processing chamber.
  49. Wang, Hougong; Xu, Zheng; Ngan, Kenny King-Tai, Method and apparatus for processing substrates in a system having high and low pressure areas.
  50. Granneman, Ernst Hendrik August; Hunssen, Frank, Method and apparatus for supporting a semiconductor wafer during processing.
  51. Schatzeder, Anton; Brenninger, Georg, Method and device for regulating the differential pressure in epitaxy reactors.
  52. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.
  53. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  54. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.
  55. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.
  56. Kang, DongSeok, Method for depositing thin film.
  57. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.
  58. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.
  59. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.
  60. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.
  61. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.
  62. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.
  63. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.
  64. Reed, Joseph C.; Shero, Eric J., Method for minimizing contamination in semiconductor processing chamber.
  65. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.
  66. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.
  67. Gauthier-Manuel, Bernard, Method for producing dihydrogen from hydrogenated silicon.
  68. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  69. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  70. Granneman, Ernst Hendrik August; Huussen, Frank, Method for supporting a semiconductor wafer during processing.
  71. Granneman,Ernst H. A.; Kuznetsov,Vladimir I.; Pages,Xavier; Vermont,Pascal G.; Terhorst,Herbert; Snijders,Gert Jan, Method for the heat treatment of substrates.
  72. Granneman,Ernst H. A.; Kuznetsov,Vladimir I.; Pag챔s,Xavier; Vermont,Pascal G., Method for the heat treatment of substrates.
  73. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
  74. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  75. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  76. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  77. Keeton, Tony J.; Stamp, Michael R.; Hawkins, Mark R., Method of loading a wafer onto a wafer holder to reduce thermal shock.
  78. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  79. Zheng,Lingyi A.; Doan,Trung T.; Breiner,Lyle D.; Ping,Er Xuan; Beaman,Kevin L.; Weimer,Ronald A.; Kubista,David J.; Basceri,Cem, Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces.
  80. Beaman,Kevin L.; Weimer,Ronald A.; Breiner,Lyle D.; Ping,Er Xuan; Doan,Trung T.; Basceri,Cem; Kubista,David J.; Zheng,Lingyi A., Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers.
  81. Beaman, Kevin L.; Doan, Trung T.; Breiner, Lyle D.; Weimer, Ronald A.; Ping, Er-Xuan; Kubista, David J.; Basceri, Cem; Zheng, Lingyi A., Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition.
  82. Beaman, Kevin L.; Doan, Trung T.; Breiner, Lyle D.; Weimer, Ronald A.; Ping, Er-Xuan; Kubista, David J.; Basceri, Cem; Zheng, Lingyi A., Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition.
  83. Beaman,Kevin L.; Doan,Trung T.; Breiner,Lyle D.; Weimer,Ronald A.; Ping,Er Xuan; Kubista,David J.; Basceri,Cem; Zheng,Lingyi A., Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition.
  84. Carpenter,Craig M.; Dynka,Danny, Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers.
  85. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
  86. Dando, Ross S.; Gealy, Dan, Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces.
  87. Dando, Ross S.; Gealy, Dan, Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces.
  88. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  89. Zheng, Lingyi A.; Doan, Trung T.; Breiner, Lyle D.; Ping, Er-Xuan; Beaman, Kevin L.; Weimer, Ronald A.; Basceri, Cem; Kubista, David J., Methods for forming small-scale capacitor structures.
  90. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.
  91. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.
  92. Zheng,Lingyi A.; Doan,Trung T.; Breiner,Lyle D.; Ping,Er Xuan; Weimer,Ronald A.; Kubista,David J.; Beaman,Kevin L.; Basceri,Cem, Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces.
  93. Basceri,Cem; Doan,Trung T.; Weimer,Ronald A.; Beaman,Kevin L.; Breiner,Lyle D.; Zheng,Lingyi A.; Ping,Er Xuan; Sarigiannis,Demetrius; Kubista,David J., Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces.
  94. Basceri,Cem; Doan,Trung T.; Weimer,Ronald A.; Beaman,Kevin L.; Breiner,Lyle D.; Zheng,Lingyi A.; Ping,Er Xuan; Sarigiannis,Demetrius; Kubista,David J., Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces.
  95. Pun, Digby; Shajii, Ali; Cowe, Andrew B.; Ellis, Raymond; McWhirter, James T., Movable microchamber system with gas curtain.
  96. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
  97. Sneh, Ofer, Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems.
  98. Sneh, Ofer, Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems.
  99. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.
  100. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  101. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  102. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  103. Winkler, Jereld Lee, Pulsed remote plasma method and system.
  104. Sugiyama, Toru; Nakano, Ryu, Purge step-controlled sequence of processing semiconductor wafers.
  105. Carpenter, Craig M.; Dando, Ross S.; Dynka, Danny, Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces.
  106. Carpenter,Craig M.; Dando,Ross S.; Dynka,Danny, Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces.
  107. Dando, Ross S., Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces.
  108. Miller, Matthew W.; Basceri, Cem, Reactors, systems and methods for depositing thin films onto microfeature workpieces.
  109. Zhu, Chiyu, Selective film deposition method to form air gaps.
  110. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  111. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.
  112. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  113. Carpenter,Craig M.; Dando,Ross S.; Mardian,Allen P.; Hamer,Kevin T.; Cantin,Raynald B.; Campbell,Philip H.; Tschepen,Kimberly R.; Mercil,Randy W., Semiconductor substrate processing chamber and accessory attachment interfacial structure.
  114. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
  115. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  116. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.
  117. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  118. Doley, Allan; Goodwin, Dennis; O'Neill, Kenneth; Vrijburg, Gerben; Rodriguez, David; Aggarwal, Ravinder, Substrate handling chamber.
  119. Kudo, Hiroyuki; Okubo, Takahiro; Kubota, Minoru, Substrate processing unit.
  120. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  121. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.
  122. Doley Allan ; Goodwin Dennis ; O'Neill Kenneth ; Vrijburg Gerben ; Rodriguez David, System and method for reducing particles in epitaxial reactors.
  123. Sarigiannis,Demetrius; Meng,Shuang; Derderian,Garo J., Systems and methods for depositing material onto microfeature workpieces in reaction chambers.
  124. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
  125. Kubista, David J.; Doan, Trung T.; Breiner, Lyle D.; Weimer, Ronald A.; Beaman, Kevin L.; Ping, Er-Xuan; Zheng, Lingyi A.; Basceri, Cem, Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers.
  126. Kuznetsov,Vladimir; Granneman,Ernst H. A., Temperature control for single substrate semiconductor processing reactor.
  127. Suter, Guido; Domancich, Kevin; Scherer, Daniel Andreas; Weibel, Reto, Through type furnace for substrates comprising a longitudinal slit.
  128. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.
  129. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
  130. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.
  131. Doan,Trung Tri, Variable temperature deposition methods.
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AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

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