초록 ▼

The present invention relates to a novel planar technology approach utilizing ion implantation to improve the fabrication procedure for manufacturing nitride light-emitting and laser diodes. The simplified processing significantly reduces the costs of manufacturing these devices and allows flip-chip

The present invention relates to a novel planar technology approach utilizing ion implantation to improve the fabrication procedure for manufacturing nitride light-emitting and laser diodes. The simplified processing significantly reduces the costs of manufacturing these devices and allows flip-chip bonding to be used for efficient heat removal, yielding much brighter LEDs and more powerful lasers.

대표청구항 ▼

[ I claim:] [1.] A method for producing a semiconductor device suitable for use as a light-emitting diode or laser diode comprisinga. providing a transparent substrate capable of supporting single crystal nitride growth having disposed sequentially thereon:a first layer of an n-type doped first nitr

[ I claim:] [1.] A method for producing a semiconductor device suitable for use as a light-emitting diode or laser diode comprisinga. providing a transparent substrate capable of supporting single crystal nitride growth having disposed sequentially thereon:a first layer of an n-type doped first nitride compound,at least one additional layer which may be doped or undoped comprising a second nitride compound or a nitride alloy, anda final topmost layer of an undoped third nitride compound;b. applying an n-type dopant to a peripheral portion of the topmost layer by ion implantation under conditions such that the n-type dopant permeates through the topmost layer and at least a portion of the additional layer or thereby forming an implanted n-type region; andc. applying a p-type dopant to a central region of the top-most layer by ion implantation under conditions such that the p-type dopant permeates through the topmost layer thereby forming a p-type implanted region.