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Process for fabricating a magnetic recording medium 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05H-001/24
  • C23C-016/50
출원번호 US-0604713 (1996-02-21)
우선권정보 JP-0347648 (1993-12-24)
발명자 / 주소
  • Itoh Kenji,JPX
  • Hayashi Shigenori,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & Ferguson, P.C.Ferguson, Jr.
인용정보 피인용 횟수 : 42  인용 특허 : 20

초록

A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through said plasma region. Also claimed i

대표청구항

[ What is claimed is:] [1.] A process for treating a substrate with a plasma comprising the steps of:generating a sheet beam plasma in a reaction chamber using a raw material gas introduced into said reaction chamber through a continuous slit-like inlet, said sheet beam plasma having a cross-section

이 특허에 인용된 특허 (20)

  1. Beisswenger Siegfried (Alzenau DEX) Beichler Barbara (Rodgau DEX) Geisler Michael (Wchtersbach DEX) Reineck Stefan (Langgns DEX), Arrangement for the production of a plasma.
  2. Hijikata Isamu (Kanagawa JPX) Uehara Akira (Kanagawa JPX) Samezawa Mitsuo (Kanagawa JPX), Electrode for use in the treatment of an object in a plasma.
  3. Yanagihara Kenji (Abiko JPX) Kimura Mituo (Yokohama JPX) Chawanya Hitoshi (Yokohama JPX) Numata Koshi (Kawasaki JPX), Film formation process.
  4. Fujioka Yasushi (Hikone JPX) Kurokawa Takashi (Kawasaki JPX) Kanai Masahiro (Hikone JPX) Sano Masafumi (Nagahama JPX) Yoshino Takehito (Nagahama JPX) Kohda Yuzo (Nagahama JPX), Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers.
  5. Kokai Fumio (Palo Alto CA) Ichijo Minoru (Toride JPX) Wakai Kunio (Ibaraki JPX), Magnetic recording medium and production of the same.
  6. Murai Mikio (Hirakata JPX) Takahashi Kiyoshi (Ibaragi JPX) Odagiri Masaru (Kawanishi JPX) Ueda Hideyuki (Takatsuki JPX), Method for forming a film with plasma CVD process.
  7. Karner Johann (Feldkirch ATX) Bergmann Erich (Mels CHX), Method of and apparatus for a direct voltage arc discharge enhanced reactive treatment of objects.
  8. Mitani Tsutomu (Akashi) Nakaue Hirokazu (Higashiosaka) Kurokawa Hideo (Katano JPX), Method of and apparatus for synthesizing diamondlike thin film.
  9. Kohmura Yukio (Chiba JPX) Ishida Yoshinori (Ichihara JPX) Nishimoto Takuya (Yokohama JPX), Method of forming a thin film by plasma CVD and apapratus for forming a thin film.
  10. Yamaura Michio (Hachioji JPX) Yatabe Toshiaki (Tokyo JPX) Matsuzawa Hiroshi (Tokyo JPX), Method of producing a magnetic recording medium.
  11. Takahashi Kiyoshi (Ibaraki JPX) Murai Mikio (Hirakata JPX) Odagiri Masaru (Kawanishi JPX), Method of producing magnetic recording medium.
  12. Matsumoto Minoru (Tsukuba JPX) Ogino Etsuo (Tsukuba JPX) Tsuno Toshio (Tsukuba JPX), Plasma CVD method.
  13. Yamashita Eiji (Tokyo JPX) Muguruma Terumi (Tokyo JPX), Plasma ashing method.
  14. Hijikata Isamu (Tokyo JPX) Uehara Akira (Kanagawa JPX) Nakane Hisashi (Kanagawa JPX), Plasma etching method.
  15. Chang Mei (Cupertino CA) Leung Cissy (Fremont CA), Plasma processing apparatus.
  16. Fujimoto Hideki (Fuchu JPX), Plasma processing apparatus.
  17. Hanak Joseph J. (Birmingham MI), Process and apparatus for continuous production of lightweight arrays of photovoltaic cells.
  18. Nakatani Kenji (Hino JPX) Okaniwa Hiroshi (Hachioji JPX) Yano Mitsuaki (Osaka JPX), Reactor for depositing a layer on a moving substrate.
  19. Okada Ken (Takatsuki JPX) Daimon Junnosuke (Nara JPX), Sheet plasma CVD apparatus.
  20. Chen Lee (Poughkeepsie NY) Hendricks Charles J. (Wappingers Falls NY) Mathad Gangadhara S. (Poughkeepsie NY) Poloncic Stanley J. (Wappingers Falls NY), Single wafer plasma etch reactor.

이 특허를 인용한 특허 (42)

  1. Yamazaki,Shunpei; Sakama,Mitsunori; Fukada,Takeshi, APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical.
  2. Veerasamy Vijayen S. ; Petrmichl Rudolph Hugo ; Thomsen Scott V., Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method.
  3. Veerasamy, Vijayen S., Coated article with DLC inclusive layer(s) having increased hydrogen content at surface area.
  4. Alexeff Igor, Direct current energy discharge system.
  5. Yamazaki, Shunpei, Display device.
  6. Yamazaki,Shunpei, Display device.
  7. Yamazaki,Shunpei, Display device.
  8. Veerasamy Vijayen S., Highly tetrahedral amorphous carbon coating on glass.
  9. Veerasamy Vijayen S., Highly tetrahedral amorphous carbon coating on glass.
  10. Veerasamy, Vijayen S., Highly tetrahedral amorphous carbon coating on glass.
  11. Veerasamy Vijayen S. ; Petrmichl Rudolph Hugo ; Thomsen Scott V., Hydrophobic coating including DLC and/or FAS on substrate.
  12. Vijayen S. Veerasamy, Hydrophobic coating including DLC on substrate.
  13. Vijayen S. Veerasamy, Hydrophobic coating including DLC on substrate.
  14. Veerasamy Vijayen S. ; Petrmichl Rudolph Hugo, Hydrophobic coating with DLC & FAS on substrate.
  15. Fonash, Stephen J.; Lin, Xin; Reber, Douglas M., Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications.
  16. Vijayen S. Veerasamy ; Rudolph Hugo Petrmichl ; Scott V. Thomsen, Low-E coating system including protective DLC.
  17. Suzuki, Mikio; Takagi, Kimie; Lu, Wenqiang; Daio, Hiroshi, Magnetic recording medium and production process thereof.
  18. Wang, Shulin; Sanchez, Errol Antonio C.; Chen, Aihua (Steven), Method and apparatus for forming a high quality low temperature silicon nitride layer.
  19. Wang,Shulin; Sanchez,Errol Antonio C.; Chen,Aihua, Method for forming a high quality low temperature silicon nitride film.
  20. Vijayen S. Veerasamy ; Rudolph Hugo Petrmichl, Method of depositing DLC inclusive coating on substrate.
  21. Vijayen S. Veerasamy ; Rudolph Hugo Petrmichl ; Scott V. Thomsen, Method of deposition DLC inclusive layer(s) using hydrocarbon and/or siloxane gas(es).
  22. Veerasamy, Vijayen S.; Petrmichl, Rudolph Hugo, Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same.
  23. Vijayen S. Veerasamy ; Rudolph Hugo Petrmichl, Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon.
  24. Veerasamy, Vijayen S.; Petrmichl, Rudolph Hugo, Method of making a coated article including DLC and FAS.
  25. Veerasamy, Vijayen S.; Petrmichl, Rudolph Hugo; Thomsen, Scott V., Method of making coated article including DLC inclusive layer over low-E coating.
  26. Vijayen S. Veerasamy ; Rudolph Hugo Petrmichl ; Scott V. Thomsen, Method of making coated article including diamond-like carbon (DLC) and FAS.
  27. Veerasamy, Vijayen S., Method of making coated article including layer(s) of diamond-like carbon which may be hydrophobic.
  28. Veerasamy, Vijayen S., Method of making coating article including carbon coating on glass.
  29. Veerasamy,Vijayen S., Method of making heat treatable coated article with diamond-like carbon (DLC) inclusive layer.
  30. Veerasamy, Vijayen S., Method of making heat treatable coated article with protective layer.
  31. Vijayen S. Veerasamy, Method of making hydrophobic coated article.
  32. Nakamura, Osamu, Plasma treatment apparatus.
  33. Yamazaki,Shunpei; Arai,Yasuyuki; Watanabe,Yasuko, Plasma treatment apparatus and method for plasma treatment.
  34. Yamazaki,Shunpei; Arai,Yasuyuki; Watanabe,Yasuko, Plasma treatment apparatus and method for plasma treatment.
  35. Yamazaki,Shunpei; Arai,Yasuyuki; Watanabe,Yasuko, Plasma treatment apparatus and method for plasma treatment.
  36. Itoh,Kenji; Hayashi,Shigenori, Process for treating a substrate with a plasma.
  37. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  38. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  39. Fukada, Takeshi, Semiconductor device and method of manufacturing the same.
  40. Fukada,Takeshi, Semiconductor device with diamond-like carbon film on backside of substrate.
  41. Veerasamy, Vijayen S.; Petrmichl, Rudolph Hugo; Thomsen, Scott V., Solar management coating system including protective DLC.
  42. Vijayen S. Veerasamy ; Rudolph Hugo Petrmichl ; Scott V. Thomsen, Solar management coating system including protective DLC.
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