$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Process for making a silicon carbide sintered body 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C04B-035/569
출원번호 US-0853719 (1997-05-09)
우선권정보 JP-0155670 (1996-06-17)
발명자 / 주소
  • Takahashi Yoshitomo,JPX
  • Wada Hiroaki,JPX
  • Miyamoto Taro,JPX
출원인 / 주소
  • Bridgestone Corporation, JPX
대리인 / 주소
    Oliff & Berridge, PLC
인용정보 피인용 횟수 : 21  인용 특허 : 12

초록

A silicon carbide sintered body according to the present invention is a silicon carbide sintered body having a density of 2.9 g/cm.sup.3 or higher, obtained by means of hot pressing a mixture of silicon carbide powder and a non-metal-based sintering additive such as an organic compound which produce

대표청구항

[ What is claimed is:] [1.] A process for making a silicon carbide sintered body, comprising:providing a silicon carbide powder consisting essentially of silicon carbide particles that have an average particle diameter of 0.01 to 10 .mu.m and are formed by the same powder making process; anda sinter

이 특허에 인용된 특허 (12)

  1. Talbert Lloyd G. (Alexander AR) Brazil Steven M. (Benton AR), Graphite-loaded silicon carbide.
  2. Kijima Kazunori (131 ; Fukakusa Goudou Shukusha ; Nishidate-cho Kanyuuchi ; Fukakusa ; Fushimi-Ku Kyoto-shi ; Kyoto JPX) Arai Eiki (Narashino JPX) Miyazawa Youichi (Narashino JPX) Konishi Mikio (Nara, Highly pure sintered carbide with high electric conductivity and process of producing the same.
  3. Krstic Vladimir D. (Queen\University ; Department of Materials and Metallurgical Eng. ; Nicol Hall Kingston ; Ontario CAX) Vlajic Milan (Queen\University ; Department of Materials and Metallurgical E, Making of sintered silicon carbide bodies.
  4. Kawasaki Shinji (Nagoya JPX), Method for producing high density SiC sintered body.
  5. Kurachi Yasuo (Kodaira JPX) Arai Katsuhiko (Iruma JPX) Irako Koichi (Higashimurayama JPX), Process for producing a sintered cubic silicon carbide.
  6. Kawasaki, Shinji; Kajita, Masaharu; Matsuhiro, Keiji, Process for producing high density SiC sintered bodies.
  7. Kanemoto Masashi,JPX ; Endo Shinobu,JPX ; Hashimoto Masao,JPX, Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single.
  8. Sakaguchi Mikio (Wakayama JPX) Otsuka Kazuhiro (Wakayama JPX), Process for the production of carbon-filled ceramic composite material.
  9. Kriegesmann Jochen (Durach-Bechen DEX) Hunold Klaus (Kempten DEX) Lipp Alfred (Bad Worishofen DEX) Reinmuth Klaus (Durach DEX) Schwetz Karl A. (Sulzberg DEX), Shaped polycrystalline silicon carbide articles and isostatic hot-pressing process.
  10. Tani Toshihiko (Aichi JPX) Wada Shigetaka (Mie JPX), Silicon carbide composite ceramic.
  11. Kijima Kazunori (Kyoto JPX) Arai Eiki (Narashino JPX) Miyazawa Youichi (Narashino JPX) Konishi Mikio (Narashino JPX) Kato Ken (Funabashi JPX), Sintered silicon carbide body with high thermal conductivity and process of producing the same.
  12. Schwetz Karl A. (Sulzberg DEX) Reinmuth Klaus (Durach DEX) Hunold Klaus (Kempten DEX) Isemann Franz (Oberstdorf DEX), Substantially pore-free sintered polycrystalline articles of a 상세보기

이 특허를 인용한 특허 (21)

  1. Parkhe, Vijay D.; Ahmann, Kurt J.; Tsai, Matthew C.; Sansoni, Steve, Coating for reducing contamination of substrates during processing.
  2. Parkhe, Vijay D.; Ahmann, Kurt J; Tsai, Matthew C; Sansoni, Steve, Cooling pedestal with coating of diamond-like carbon.
  3. Kobayashi, Hiromichi, Corrosion-resistive ceramic materials and members for semiconductor manufacturing.
  4. Parkhe, Vijay D; Ahmann, Kurt J; Tsai, Matthew C; Sansoni, Steve, Heat exchange pedestal with coating of diamond-like material.
  5. Goela,Jitendra S.; Pickering,Michael A., Low resistivity silicon carbide.
  6. Fukuda Makoto,JPX ; Chikuba Masanori,JPX, Method for manufacturing conductive wafers, method for manufacturing thin-plate sintered compacts, method for manufacturing ceramic substrates for thin-film magnetic head, and method for machining co.
  7. Otsuki Masashi,JPX ; Wada Hiroaki,JPX ; Takahashi Yoshitomo,JPX ; Saito Tasuku,JPX, Method for producing sintered silicon carbide.
  8. Pickering, Michael A.; Goela, Jitendra S., Opaque low resistivity silicon carbide.
  9. Takahashi Yoshitomo,JPX ; Wada Hiroaki,JPX ; Satou Akira,JPX, Process for making heater member.
  10. Matsunaga, Kenji; Kajii, Shinji; Kodama, Tsutomu, Process for producing SiC fiber-bonded ceramics.
  11. Nakamura, Masaharu; Miyamoto, Yoshinari; Tojo, Tetsuro, Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex.
  12. Adams, Dale, Process for sintering silicon carbide.
  13. Adams, Dale, Process for sintering silicon carbide.
  14. Ramamurthy, Sundar; Hegedus, Andreas G.; Thakur, Randhir, Processing multilayer semiconductors with multiple heat sources.
  15. Kajiwara Meisetsu,JPX ; Hashimoto Masao,JPX ; Wada Hiroaki,JPX, Production method of silicon carbide particles.
  16. Sorabji, Khurshed; Ranish, Joseph Michael; Aderhold, Wolfgang; Hunter, Aaron Muir; Lerner, Alexander N., Rapid thermal processing chamber with shower head.
  17. Han, Jung Eun; Shin, Dong Geun; Kim, Byung Sook, Silicon carbide powder, method for manufacturing the same and silicon carbide sintered body, method for manufacturing the same.
  18. Hiroyuki Yokote JP; Tatsuya Kimura JP, Silicon carbide substrate for forming magnetic head.
  19. Otsuki Masashi,JPX ; Wada Hiroaki,JPX ; Takahashi Yoshitomo,JPX ; Saito Tasuku,JPX, Sintered silicon carbide and method for producing the same.
  20. Ramachandran,Balasubramanian; Ranish,Joseph Michael; Jallepally,Ravi; Ramamurthy,Sundar; Achutharaman,Raman; Haas,Brian; Hunter,Aaron, Tailored temperature uniformity.
  21. Sorabji, Khurshed; Lerner, Alexander; Ranish, Joseph; Hunter, Aaron; Adams, Bruce; Behdjat, Mehran; Ramanujam, Rajesh, Temperature measurement and control of wafer support in thermal processing chamber.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로