초록 ▼

A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating eleme

A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating element comprising a coil of resistance heating conductor. The coiled resistance heating conductor can be a coil of resistance heating wire, the coil having an outer diameter of from 1 to 7 mm and supported in an annular heating element support. Each heating element support is dimensioned to support and accommodate the thermally expanded heating element supported therein at both the minimum and maximum furnace temperatures. Preferably, each annular heating element support is provided by an annular recess in the insulation surrounding the array of heating elements. The preferred vertical rapid heating and cooling furnace for treating semiconductor wafers comprises a hot wall reaction tube and a cylindrical array of circular parallel heating elements substantially concentric therewith and spaced therefrom to define a cooling gas passageway between said hot wall reaction tube and said cylindrical array of heating elements. The cooling gas passageway has lower and upper ends, the furnace has a cooling gas inlet opening in communication with said lower end, and a cooling gas exhaust outlet in communication with said upper end.

대표청구항 ▼

[ The invention claimed is:] [1.] A vertical rapid heating and cooling furnace for treating semiconductor wafers, comprising:a hot wall reaction tube positioned within an array of heating elements spaced therefrom, the spacing between the hot wall tube and the array of heating elements defining a co

[ The invention claimed is:] [1.] A vertical rapid heating and cooling furnace for treating semiconductor wafers, comprising:a hot wall reaction tube positioned within an array of heating elements spaced therefrom, the spacing between the hot wall tube and the array of heating elements defining a cooling gas passageway therebetween and an exhaust conduit, the cooling gas passageway having a first end communicating with a cooling gas inlet and a second end communicating with the exhaust conduit, wherein cooling gas passed through the cooling gas passageway to the exhaust conduit removes heat from the furnace;an insulation member including an axially concentric stack of rings of insulation which each have an upper and a lower annular interior curved surface shaped to receive a heating element, the insulation member positioned in a surrounding relationship to the array of heating elements and including anchor receiving recesses formed in an interior of the insulation member to provide support of the array of heating elements; anda plurality of anchors which each include a proximal end positioned in an anchor receiving recess in the interior of the insulation member and a distal end coupled with the array of heating elements.