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Rapid thermal processing (RTP) system with gas driven rotating substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05B-001/00
출원번호 US-0977019 (1997-11-24)
발명자 / 주소
  • Aschner Helmut,DEX
  • Hauke Andreas,DEX
  • Walk Ulrich,DEX
  • Zernickel Dieter,DEX
출원인 / 주소
  • Steag-RTP Systems, DEX
대리인 / 주소
    Hodgson
인용정보 피인용 횟수 : 68  인용 특허 : 6

초록

An apparatus, method, and system for Rapid Thermal Processing (RTP), whereby the object to be processed is rotated under the radiation sources of the RTP system by a gas jet system, is presented.

대표청구항 ▼

[ We claim:] [1.] An apparatus for rapid thermal processing (RTP) of a semiconductor wafer in an RTP system, comprising:a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP system, the first gas flow acting primarily to support t

이 특허에 인용된 특허 (6)

  1. Frijlink Peter M. (Crosne FRX), Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface.
    상세보기
  2. Bhat Rajaram (Middletown NJ), Gas foil rotating substrate holder.
    상세보기
  3. Amada Haruo (Kamisato JPX), Method and apparatus for microwave heat-treatment of a semiconductor water.
    상세보기
  4. Amada Haruo (Kamisato JPX), Method and apparatus for the heat-treatment of a plate-like member.
    상세보기
  5. Moore Gary M. (San Jose CA) Nishikawa Katsuhito (San Jose CA), Rapid thermal processing apparatus for processing semiconductor wafers.
    상세보기
  6. Somekh Sasson R. (Los Altos Hills CA) Salzman Philip M. (San Jose CA) Vierny Oskar U. (Palo Alto CA), Wafer handling within a vacuum chamber using vacuum.
    상세보기

이 특허를 인용한 특허 (68)

  1. Koelmel, Blake; Lerner, Alexander N.; Ranish, Joseph M.; Sangam, Kedarnath; Sorabji, Khurshed, Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber.
    상세보기
  2. Koelmel, Blake; Lerner, Alexander N.; Ranish, Joseph M.; Sangam, Kedarnath; Sorabji, Khurshed, Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber.
    상세보기
  3. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
    상세보기
  4. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
    상세보기
  5. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
    상세보기
  6. Strauch,Gerhard Karl, Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon.
    상세보기
  7. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
    상세보기
  8. Graf, Ottmar; Grandy, Michael, Determining the position of a semiconductor substrate on a rotation device.
    상세보기
  9. Arena Foster,Chantal J.; Awtrey,Allan Wendell; Ryza,Nicholas Alan; Schilling,Paul, Developing photoresist with supercritical fluid and developer.
    상세보기
  10. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Developing photoresist with supercritical fluid and developer.
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  11. Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John, Directed reagents to improve material uniformity.
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  12. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Drying resist with a solvent bath and supercritical CO2.
    상세보기
  13. Paisley, Michael James; Sumakeris, Joseph John, Gas driven planetary rotation apparatus and methods for forming silicon carbide layers.
    상세보기
  14. Helmut Aschner DE; Andreas Hauke DE; Karsten Weber DE; Dieter Zernickel DE, Gas driven rotating susceptor for rapid thermal processing (RTP) system.
    상세보기
  15. Saxler, Adam William, Gas driven rotation apparatus and method for forming crystalline layers.
    상세보기
  16. Paisley, Michael; Sumakeris, Joseph John; Kordina, Olle, Gas-driven rotation apparatus and method for forming silicon carbide layers.
    상세보기
  17. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
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  18. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.
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  19. Jones, William D., High pressure fourier transform infrared cell.
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  20. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
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  21. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
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  22. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
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  23. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
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  24. Sumakeris,Joseph John; Paisley,Michael James, Housing assembly for an induction heating device including liner or susceptor coating.
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  25. Sumakeris, Joseph John; Paisley, Michael James, Induction heating devices and methods for controllably heating an article.
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  26. Karazim, Michael P., Internal chamber rotation motor, alternative rotation.
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  27. Kelekar, Rajesh, Internal rinsing in touchless interstitial processing.
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  28. Thomas R. Sutton ; Robert Koch, Method and apparatus for agitation of workpiece in high pressure environment.
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  29. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
    상세보기
  30. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
    상세보기
  31. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
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  32. Kaeppeler, Johannes, Method and device for the temperature control of surface temperatures of substrates in a CVD reactor.
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  33. Kaeppeler,Johannes, Method and device for the temperature control of surface temperatures of substrates in a CVD reactor.
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  34. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
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  35. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
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  36. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
    상세보기
  37. Nenyei, Zsolt; Timans, Paul J.; Lerch, Wilfried; Niess, Jüergen; Falter, Manfred; Schmid, Patrick; O'Carroll, Conor Patrick; Cardema, Rudy; Fidelman, Igor; Tay, Sing-Pin; Hu, Yao Zhi; Devine, Daniel J., Method and system for thermally processing a plurality of wafer-shaped objects.
    상세보기
  38. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
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  39. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
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  40. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
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  41. Nenyei, Zsolt; Frigge, Steffen; Schmid, Patrick; Hülsmann, Thorsten; Theiler, Thomas, Method for the thermal treatment of disk-shaped substrates.
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  42. Tsai,Tsung Hsun, Method for thermal processing a semiconductor wafer.
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  44. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
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  46. Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.
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  47. Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.
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  49. Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.
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  54. Koelmel, Blake; Myo, Nyi O., Non-contact substrate processing.
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  55. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
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  59. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
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  60. Speciale,Natale; Valente,Gianluca; Crippa,Danilo; Preti,Franco, Support system for a treatment apparatus.
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  62. Maccalli,Giacomo Nicolao; Kordina,Olle; Valente,Gianluca; Crippa,Danilo; Preti,Franco, Susceptor system.
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  63. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
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  64. Kahlon, Satbir; Egami, Glen, System and method for reducing particles and marks on wafer surface following reactor processing.
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  65. Aderhold, Wolfgang R.; Hunter, Aaron; Ranish, Joseph M., System for non radial temperature control for rotating substrates.
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  66. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
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  67. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
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  68. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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