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Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/06
  • H01L-033/00
출원번호 US-0806646 (1997-02-26)
우선권정보 JP-0197914 (1994-07-28)
발명자 / 주소
  • Manabe Katsuhide,JPX
  • Kato Hisaki,JPX
  • Sassa Michinari,JPX
  • Yamazaki Shiro,JPX
  • Asai Makoto,JPX
  • Shibata Naoki,JPX
  • Koike Masayoshi,JPX
출원인 / 주소
  • Toyoda Gosei Co., Ltd., JPX
대리인 / 주소
    Pillsbury Madison & Sutro LLP
인용정보 피인용 횟수 : 50  인용 특허 : 3

초록

A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type)

대표청구항

[ What is claimed is:] [1.] A light-emitting semiconductor device of group III nitride compound comprising:an n-layer of n-type conduction comprising gallium nitride GaN;an emission layer of gallium indium nitride satisfying the formula Al.sub.x1 Ga.sub.y1 In.sub.1-x1-y1 N (0.ltoreq.x1.ltoreq.1, 0.l

이 특허에 인용된 특허 (3)

  1. Okazaki Nobuo (38-805 ; 1-ban ; Joshin 1-chome Inazawa JPX) Manabe Katsuhide (38-805 ; 1-ban ; Joshin 1-chome Inazawa JPX) Akasaki Isamu (38-805 ; 1-ban ; Joshin 1-chome Nishi-ku ; Nagoya-shi ; Aichi, Gallium nitride group compound semiconductor laser diode.
  2. Nakamura Shuji (Anan JPX) Mukai Takashi (Anan JPX) Iwasa Naruhito (Anan JPX), Light-emitting gallium nitride-based compound semiconductor device.
  3. Kotaki Masahiro (Inazawa JPX) Akasaki Isamu (Nagoya JPX) Amano Hiroshi (Hamamatsu JPX), Light-emitting semiconductor device using gallium nitride group compound.

이 특허를 인용한 특허 (50)

  1. Fenwick, William E., Boron-containing buffer layer for growing gallium nitride on silicon.
  2. Chen, Zhen, Buffer layer for GaN-on-Si LED.
  3. Lin, Chao-Kun, Distributed bragg reflector for reflecting light of multiple wavelengths from an LED.
  4. Lin, Chao-Kun, Distributed bragg reflector for reflecting light of multiple wavelengths from an LED.
  5. Chuang, Chih-Wei; Lin, Chao-Kun, Distributed current blocking structures for light emitting diodes.
  6. Chuang, Chih-Wei; Lin, Chao-Kun, Distributed current blocking structures for light emitting diodes.
  7. Goetz, Werner K.; Camras, Michael D.; Chen, Changhua; Christenson, Gina L.; Kern, R. Scott; Kuo, Chihping; Martin, Paul Scott; Steigerwald, Daniel A., Formation of Ohmic contacts in III-nitride light emitting devices.
  8. Goetz,Werner K.; Camras,Michael D.; Chen, legal representative,Xiaoping; Christenson,Gina L.; Kern,R. Scott; Kuo,Chihping; Martin,Paul Scott; Steigerwald,Daniel A.; Chen,Changhua, Formation of Ohmic contacts in III-nitride light emitting devices.
  9. Goetz, Werner K.; Camras, Michael D.; Chen, Changhua; Christenson, Gina L.; Kern, R. Scott; Kuo, Chihping; Martin, Paul Scott; Steigerwald, Daniel A., Formation of ohmic contacts in III-nitride light emitting devices.
  10. Yang, Long, GaN LEDs with improved area and method for making the same.
  11. Yang, Long, GaN LEDs with improved area and method for making the same.
  12. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
  13. Kim,Je Won; Oh,Jeong Tak; Kim,Dong Joon; Kim,Sun Woon; Lee,Soo Min, Gallium nitride-based semiconductor light-emitting device.
  14. Chuang, Chih-Wei; Lin, Chao-Kun; Yang, Long; Hamaguchi, Norihito, High temperature gold-free wafer bonding for light emitting diodes.
  15. Goetz, Werner; Gardner, Nathan Fredrick; Kern, Richard Scott; Kim, Andrew Youngkyu; Munkholm, Anneli; Stockman, Stephen A.; Kocot, Christopher P.; Schneider, Jr., Richard P., III-Nitride light emitting devices with low driving voltage.
  16. Chen, Zhen, LED having a low defect N-type layer that has grown on a silicon substrate.
  17. Chen, Zhen, LED on silicon substrate using zinc-sulfide as buffer layer.
  18. Chen, Zhen; Fu, Yi, LED that has bounding silicon-doped regions on either side of a strain release layer.
  19. Lester, Steven; Ramer, Jeff; Wu, Jun; Zhang, Ling, LED with improved injection efficiency.
  20. Lester, Steven; Ramer, Jeff; Wu, Jun; Zhang, Ling, LED with improved injection efficiency.
  21. Lester, Steven; Ramer, Jeff; Wu, Jun; Zhang, Ling, LED with improved injection efficiency.
  22. Chen, Zhen; Fenwick, William; Lester, Steve, Laterally contacted blue LED with superlattice current spreading layer.
  23. Chen, Zhen; Fu, Yi, Led that has bounding silicon-doped regions on either side of a strain release layer.
  24. Yang, Long; Fenwick, Will, Light emitting devices having dislocation density maintaining buffer layers.
  25. Lin, Chao-Kun; Yan, Li; Chuang, Chih-Wei, Light emitting devices having light coupling layers.
  26. Yan, Li; Lin, Chao-Kun; Chuang, Chih-Wei, Light emitting devices having light coupling layers.
  27. Yan, Li; Lin, Chao-Kun; Chuang, Chih-Wei, Light emitting devices having light coupling layers with recessed electrodes.
  28. Ramer, Jeff; Ting, Steve, Light emitting regions for use with light emitting devices.
  29. Isomoto, Kenji; Furukawa, Chisato, Method for manufacturing light emitting device and light emitting device.
  30. Lester, Steven D., Method for reducing stress in epitaxial growth.
  31. Chen, Zhen; Fu, Yi, N-type gallium-nitride layer having multiple conductive intervening layers.
  32. Nakamura, Shuji; Nagahama, Shinichi; Iwasa, Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.
  33. Nakamura,Shuji; Nagahama,Shinichi; Iwasa,Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.
  34. Nakamura,Shuji; Nagahama,Shinichi; Iwasa,Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.
  35. Lin, Chao Kun, Non-reactive barrier metal for eutectic bonding process.
  36. Fenwick, William E.; Ramer, Jeff, Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow.
  37. Fenwick, William E.; Ramer, Jeff, Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow.
  38. Ting, Steve, P-type doping layers for use with light emitting devices.
  39. Ting, Steve, P-type doping layers for use with light emitting devices.
  40. Ting, Steve, P-type doping layers for use with light emitting devices.
  41. Herold Wolf-Dietrich,DEX ; Kuerschner Ralf,DEX ; Koran Peter,DEX, Photopolymerization apparatus.
  42. Nobuhiro Suzuki JP; Hideto Sugawara JP, Semiconductor light emitting device.
  43. Lester, Steven D.; Chuang, Chih-Wei, Series connected segmented LED.
  44. Lester, Steven D.; Chuang, Chih-Wei, Series connected segmented LED.
  45. Lester, Steven D.; Chuang, Chih-Wei, Series connected segmented LED.
  46. Lin, Chao Kun, Thin-film LED with P and N contacts electrically isolated from the substrate.
  47. Lin, Chao-Kun, Thin-film LED with P and N contacts electrically isolated from the substrate.
  48. Lin, Chao-Kun, Thin-film LED with P and N contacts electrically isolated from the substrate.
  49. Lin, Chao-Kun, Thin-film LED with p and n contacts electrically isolated from the substrate.
  50. Cui, Jie, Trenched substrate for crystal growth and wafer bonding.
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