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Semiconductor device having long pads and short pads alternated for fine pitch without sacrifice of probing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
출원번호 US-0140656 (1998-08-26)
우선권정보 JP-0231523 (1997-08-27)
발명자 / 주소
  • Takamori Kazuo,JPX
출원인 / 주소
  • NEC Corporation, JPX
대리인 / 주소
    Sughrue, Mion, Zinn, Macpeak & Seas, PLLC
인용정보 피인용 횟수 : 41  인용 특허 : 1

초록

An integrated circuit fabricated on a semiconductor chip is electrically connected through an array of pads to leads of a package; the pad array includes long pads exposed to first partially constricted openings and short pads exposed to second partially constricted openings and alternated with the

대표청구항

[ What is claimed is:] [1.] A semiconductor device comprising:a substrate structure having an insulating layer,a plurality of first pads formed on said insulating layer and electrically connected to an integrated circuit;a plurality of second pads longer than said plurality of first pads, electrical

이 특허에 인용된 특허 (1)

  1. Takekawa Kouichi (Tokyo JPX) Bonkohara Manabu (Tokyo JPX), Method of manufacturing semiconductor device.

이 특허를 인용한 특허 (41)

  1. Manning, Troy A.; Ball, Michael B., Apparatus and methods for coupling conductive leads of semiconductor assemblies.
  2. Troy A. Manning ; Michael B. Ball, Apparatus and methods for coupling conductive leads of semiconductor assemblies.
  3. Manning Troy A. ; Ball Michael B., Apparatus for electrically coupling bond pads of a microelectronic device.
  4. Fritzsche, Robert M.; Abbott, Donald C., Fine pitch lead frame.
  5. Downey, Harold A.; Downey, Susan H.; Miller, James W., Integrated circuit die I/O cells.
  6. Manning Troy A. ; Ball Michael B., Method for electrically coupling bond pads of a microelectronic device.
  7. Sheats, James, Method of packaging and interconnection of integrated circuits.
  8. Nakamura, Nakae, Semi-conductor apparatus, a method of fabrication of the same, and a reinforcing tape used in fabrication of the same.
  9. Sasaki, Masao, Semiconductor chip having pads with plural junctions for different assembly methods.
  10. Sasaki, Masao, Semiconductor chip having pads with plural junctions for different assembly methods.
  11. Sasaki,Masao, Semiconductor chip having pads with plural junctions for different assembly methods.
  12. Sasaki,Masao, Semiconductor chip having pads with plural junctions for different assembly methods.
  13. Sasaki,Masao, Semiconductor chip having pads with plural junctions for different assembly methods.
  14. Ohnishi, Manabu; Takemura, Koji; Nagai, Noriyuki; Huh, Hoyeun; Nakayama, Tomoyuki; Doi, Atsushi, Semiconductor device.
  15. Ohnishi, Manabu; Takemura, Koji; Nagai, Noriyuki; Huh, Hoyeun; Nakayama, Tomoyuki; Doi, Atsushi, Semiconductor device.
  16. Ohnishi, Manabu; Takemura, Koji; Nagai, Noriyuki; Huh, Hoyeun; Nakayama, Tomoyuki; Doi, Atsushi, Semiconductor device.
  17. Ohnishi,Manabu; Takemura,Koji; Nagai,Noriyuki; Huh,Hoyeun; Nakayama,Tomoyuki; Doi,Atsushi, Semiconductor device.
  18. Ohnishi,Manabu; Takemura,Koji; Nagai,Noriyuki; Huh,Hoyeun; Nakayama,Tomoyuki; Doi,Atsushi, Semiconductor device.
  19. Takahashi, Tetsuji, Semiconductor device.
  20. Takahashi, Tetsuji, Semiconductor device.
  21. Taniguchi,Koichi; Nojiri,Naoki, Semiconductor device.
  22. Satake, Nobuo, Semiconductor device and method of manufacturing the same.
  23. Satake, Nobuo, Semiconductor device and method of manufacturing the same.
  24. Satake, Nobuo, Semiconductor device and method of manufacturing the same.
  25. Yamazaki, Toru, Semiconductor device and method of manufacturing the same.
  26. Noda, Tomoya; Nagase, Shigeki, Semiconductor device for driving electric motor.
  27. Ohnishi, Manabu; Takemura, Koji; Nagai, Noriyuki; Huh, Hoyeun; Nakayama, Tomoyuki; Doi, Atsushi, Semiconductor device having a pad-disposition restriction area.
  28. Ichikawa, Shingo; Hirai, Miho, Semiconductor device including multiple rows of peripheral circuit units.
  29. Maeda, Jun, Semiconductor integrated circuit having connection pads over active elements.
  30. Aoki, Daigo, Silicon structure having bonding pad.
  31. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  32. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  33. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  34. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  35. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  36. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  37. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  38. Lee, Hun-Teak; Kim, Jong-Kook; Kim, Chul-Sik; Jang, Ki-Youn; Pendse, Rajendra D., Wire bond interconnection.
  39. Lee, Hun-Teak; Kim, Jong-Kook; Kim, Chul-Sik; Jang, Ki-Youn; Pendse, Rajendra D., Wire bond interconnection and method of manufacture thereof.
  40. Pendse, Rajendra D.; Han, Byung Joon; Lee, Hun Teak, Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates.
  41. Pendse, Rajendra D.; Han, Byung Joon; Lee, HunTeak, Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates.
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