초록 ▼

A donor substrate (10) for forming multiple thin films of material (12). In one embodiment, a first thin film of material is separated or cleaved from a donor substrate by introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface

A donor substrate (10) for forming multiple thin films of material (12). In one embodiment, a first thin film of material is separated or cleaved from a donor substrate by introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh, or cleaved, surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor substrate device comprising:a donor wafer having a cleaved surface; anda layer of particles disposed within said donor wafer a selected distance from and substantially parallel to said cleaved surface to define a layer of donor wafer material between said

[ What is claimed is:] [1.] A semiconductor substrate device comprising:a donor wafer having a cleaved surface; anda layer of particles disposed within said donor wafer a selected distance from and substantially parallel to said cleaved surface to define a layer of donor wafer material between said layer of particles and said cleaved surface.