초록 ▼

A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the a

A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.

대표청구항 ▼

[ What we claim is:] [1.] A method of implanting ions comprising the steps of:vaporizing solid decaborane (B.sub.10 H.sub.14) to generate vaporized decaborane molecules;ionizing the vaporized decaborane molecules to generate decaborane ions; andaccelerating the decaborane ions by electric field to i

[ What we claim is:] [1.] A method of implanting ions comprising the steps of:vaporizing solid decaborane (B.sub.10 H.sub.14) to generate vaporized decaborane molecules;ionizing the vaporized decaborane molecules to generate decaborane ions; andaccelerating the decaborane ions by electric field to implant into a target thereby decomposing decaborane ions into boron atoms.