초록 ▼

A gate insulating film 103 is oxidized by a thermal oxidation method using a gate electrode 104 as a mask. At this time, the thickness of the gate insulating film 103 becomes thicker so that the portions indicated by 106 and 107 are obtained. The thickness of an active layer becomes thin at an end 1

A gate insulating film 103 is oxidized by a thermal oxidation method using a gate electrode 104 as a mask. At this time, the thickness of the gate insulating film 103 becomes thicker so that the portions indicated by 106 and 107 are obtained. The thickness of an active layer becomes thin at an end 112 of a channel, so that the distance from the gate electrode becomes long by the thickness. Then the strength of an electric field between a source and drain is relaxed by this portion. In this way, a thin film transistor having improved withstand voltage characteristics and leak current characteristics is obtained.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a thin film transistor being formed over a substrate, said thin film transistor including:an active layer including a source region, a drain region and a channel region formed between the source and drain regions;a gate insulating film co

[ What is claimed is:] [1.] A semiconductor device comprising:a thin film transistor being formed over a substrate, said thin film transistor including:an active layer including a source region, a drain region and a channel region formed between the source and drain regions;a gate insulating film comprising silicon oxide and covering the active layer; anda gate electrode formed on the gate insulating film;a silicon nitride film formed in direct contact with the gate insulating film;a leveling film comprising organic resin formed in direct contact with the silicon nitride film;a source electrode formed in contact with the leveling film and the source region in the active layer through the gate insulating film, the silicon nitride film and the leveling film;a drain electrode formed in contact with the leveling film and the drain region in the active layer through the gate insulating film the silicon nitride film and the leveling film;wherein the active layer is oxidized using the gate electrode as a mask.