초록 ▼

Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer with electromagnetic radiation in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) wavelengths. The surface smoothness of the resulting films are also increased by

Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer with electromagnetic radiation in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) wavelengths. The surface smoothness of the resulting films are also increased by pre-treating films with UV and/or VUV radiation. Furthermore, the gap filling abilities of the undoped silicate glass films are increased by pre-treating the thermal oxide with UV and/or VUV radiation. New equipment and methods are presented for exposing semiconductor devices to UV and/or VUV radiation, and for enhancing the deposition rates and film quality for semiconductor manufacture. Semiconductor devices incorporating the new methods are also described.

대표청구항 ▼

[ What is claimed is:] [48.] A method for preparing a semiconductor wafer, comprising:placing said wafer in a chamber having a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; andexposing said moiety

[ What is claimed is:] [48.] A method for preparing a semiconductor wafer, comprising:placing said wafer in a chamber having a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; andexposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; thereby exposing the wafer to said radiation.