초록 ▼

A bandgap reference circuit capable of operating at low voltage provides an adjustable bandgap reference voltage. The bandgap reference circuit includes a proportional to absolute temperature (PTAT) current source, a bias current source, two resistors and a transistor. The base of the transistor cou

A bandgap reference circuit capable of operating at low voltage provides an adjustable bandgap reference voltage. The bandgap reference circuit includes a proportional to absolute temperature (PTAT) current source, a bias current source, two resistors and a transistor. The base of the transistor couples to the IPTAT current source and the emitter of the transistor couples to the bias current source. The bandgap reference circuit also includes two resistors. The first resistor couples between the emitter and the base of the transistor, and the second resistor couples to the base of the transistor. The first resistor receives a portion of the bias current and provides a current proportional to a base-emitter voltage of the transistor. The second resistor receives the PTAT current and the current proportional to the base-emitter voltage of the transistor and provides a reference voltage which remains substantially constant over temperature and which is proportional to a silicon bandgap voltage. The ratio of the first and second resistors determines the proportionality of the reference voltage to the silicon bandgap voltage. Thus, by adjusting the ratio of the two resistors a reference voltage less than the silicon bandgap voltage can be obtained.

대표청구항 ▼

[ What is claimed is:] [1.] An apparatus including a bandgap reference circuit, the bandgap reference circuit comprising:a proportional to absolute temperature (PTAT) current source that provides a PTAT current;a bias current source that provides a bias current;a transistor having a base, an emitter

[ What is claimed is:] [1.] An apparatus including a bandgap reference circuit, the bandgap reference circuit comprising:a proportional to absolute temperature (PTAT) current source that provides a PTAT current;a bias current source that provides a bias current;a transistor having a base, an emitter, and a collector, the base coupled to the IPTAT current source and the emitter coupled to the bias current source;a first resistive circuit coupled between the emitter and the base of the transistor, the first resistive circuit configured to receive a portion of the bias current and in accordance therewith provide a current proportional to a base-emitter voltage of the transistor; anda second resistive circuit coupled to the base of the transistor and configured to receive the PTAT current and the current proportional to the base-emitter voltage of the transistor and in accordance therewith provide a reference voltage which remains substantially constant over temperature and which is proportional to a silicon bandgap voltage,wherein the proportionality of the reference voltage to the silicon bandgap voltage is determined by a ratio of the first and second resistive circuits.