초록 ▼

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

대표청구항 ▼

[ We claim:] [1.] A structure comprising:a substrate of semiconductor-based material having a surface; anda thin film of anisotropic crystalline oxide epitaxially overlying the substrate surface wherein the anisotropic crystalline oxide includes unit cells wherein each unit cell possesses a directio

[ We claim:] [1.] A structure comprising:a substrate of semiconductor-based material having a surface; anda thin film of anisotropic crystalline oxide epitaxially overlying the substrate surface wherein the anisotropic crystalline oxide includes unit cells wherein each unit cell possesses a directional-dependent quality and the thin film is exposed to in-plane strain at the substrate/thin film interface so that substantially every one of the unit cells of the thin film has a geometrical shape which is influenced by the in-plane strain so that the directional-dependent quality is arranged in a predisposed orientation relative to the substrate surface.