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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-029/78    H01L-029/04   
미국특허분류(USC) 257/295 ; 257/627
출원번호 US-0126526 (1998-07-30)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    McKee
인용정보 피인용 횟수 : 51  인용 특허 : 5
초록
▼

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a dire...

대표
청구항
▼

[ We claim:] [1.] A structure comprising:a substrate of semiconductor-based material having a surface; anda thin film of anisotropic crystalline oxide epitaxially overlying the substrate surface wherein the anisotropic crystalline oxide includes unit cells wherein each unit cell possesses a directional-dependent quality and the thin film is exposed to in-plane strain at the substrate/thin film interface so that substantially every one of the unit cells of the thin film has a geometrical shape which is influenced by the in-plane strain so that the directi...

이 특허에 인용된 특허 (5)

  1. Fork David K. (Palo Alto CA). Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors. USP1994065323023.
  2. Nashimoto Keiichi (Kanagawa JPX) Masuda Atsushi (Kanagawa JPX). Oriented ferroelectric thin-film element and manufacturing method therefor. USP1996105567979.
  3. Summerfelt Scott R. (Dallas TX). Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer. USP1997075650646.
  4. McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN). Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process. USP1993075225031.
  5. McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN). Process for growing a film epitaxially upon an oxide surface and structures formed with the process. USP1995095450812.

이 특허를 인용한 특허 피인용횟수: 51

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