초록 ▼

An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts

An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 .mu.m thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer includes of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 .mu.m for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

대표청구항 ▼

[ Thus, having described the invention, what is claimed is:] [1.] An electronic component structure comprising:an electronic component with conductive leads;a multilayer substrate with a top surface, said substrate comprising a plurality of layers having therein metalized circuitry, and interconnect

[ Thus, having described the invention, what is claimed is:] [1.] An electronic component structure comprising:an electronic component with conductive leads;a multilayer substrate with a top surface, said substrate comprising a plurality of layers having therein metalized circuitry, and interconnecting metalized vias;a thin film structure with a top surface, a bottom surface opposite said top surface, and interconnecting metalized vias, such that said vias at said bottom surface are electrically connected to said interconnecting metalized vias of said multilayer substrate, and said vias at said top surface are electrically connected to said electronic component conductive leads, said thin film structure containing at least one capacitor comprising:at least one patterned, lower first structure layer on said top surface of said thin film structure comprising of a first conductive material, such that said conductive material is deposited at a thickness greater than 0.5 .mu.m;a dielectric layer; andan upper, second structure layer over said dielectric comprising of a second conductive material.