초록 ▼

A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired de

A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.

대표청구항 ▼

[ What is claimed is:] [1.] A method for fabricating substrates, said method comprising:providing a substrate;placing the substrate in a plasma atmosphere thereby uniformly implanting ions into a surface of said substrate to a first desired depth to provide a first distribution of said ions using pl

[ What is claimed is:] [1.] A method for fabricating substrates, said method comprising:providing a substrate;placing the substrate in a plasma atmosphere thereby uniformly implanting ions into a surface of said substrate to a first desired depth to provide a first distribution of said ions using plasma immersion ion implantation, said implanted ions defining a first thickness of material above said implant; andincreasing global energy of said substrate to initiate a cleaving action, said cleaving action being sufficient to completely free said thickness of material from a remaining portion of said substrate.