초록 ▼

A method of fabricating a semiconductor structure involving the steps of providing a SiC substrate, treating the SiC substrate with an N.sub.2 O-containing plasma, and forming a dielectric layer on the surface of the pretreated SiC substrate. A semiconductor structure produced by the method above. A

A method of fabricating a semiconductor structure involving the steps of providing a SiC substrate, treating the SiC substrate with an N.sub.2 O-containing plasma, and forming a dielectric layer on the surface of the pretreated SiC substrate. A semiconductor structure produced by the method above. An apparatus for forming a dielectric layer on a SiC substrate including a deposition chamber in which the SiC substrate is placed, a first valve that connects a first source providing N.sub.2 O to the deposition chamber, a second valve that connects a second source providing reactants that form the dielectric layer to the deposition chamber, an energy source for producing an N.sub.2 O-containing plasma from N.sub.2 O released from the first source by the first valve, and a controller that programs providing power to the energy source and opening and closing the first and second valves into two phases. A first phase in which power is provided to the energy source, the first valve is kept open, and the second valve is kept closed so that the SiC substrate can be pretreated with N.sub.2 O-containing plasma. The first phase is followed by a second phase in which the second valve is kept open so that the dielectric layer can be formed.

대표청구항 ▼

[ What is claimed is:] [1.] A method of fabricating a semiconductor structure, said method comprising:providing a SiC substrate;pretreating the SiC substrate with a plasma generated in an atmosphere containing N.sub.2 O; andforming a dielectric layer on the surface of the pretreated SiC substrate, w

[ What is claimed is:] [1.] A method of fabricating a semiconductor structure, said method comprising:providing a SiC substrate;pretreating the SiC substrate with a plasma generated in an atmosphere containing N.sub.2 O; andforming a dielectric layer on the surface of the pretreated SiC substrate, wherein the pretreating step is performed under plasma processing conditions which result in an interface between said dielectric layer and said substrate that exhibits (1) a dielectric charge density of less than about 3.times.10.sup.11 cm.sup.-2, (2) an interface trap density of less than about 2.times.10.sup.11 cm.sup.-2, and (3) a measurable flat-band voltage.