초록 ▼

A drying treatment apparatus for drying cleaned semiconductor wafers comprises drying gas producing means (41) connected to a drying treating unit (30) through a drying gas supplying pipe line (32). A flowrate controlling diaphragm pump (50) is provided in an isopropyl alcohol (IPA) supplying pipe l

A drying treatment apparatus for drying cleaned semiconductor wafers comprises drying gas producing means (41) connected to a drying treating unit (30) through a drying gas supplying pipe line (32). A flowrate controlling diaphragm pump (50) is provided in an isopropyl alcohol (IPA) supplying pipe line (32) that connects an IPA tank (48) and the drying gas producing means (41). An N.sub.2 gas supply source (52) is provided for supplying nitrogen gas into the drying gas producing means (41), and a heater (44) is disposed within the drying gas producing means to produce a drying gas. As a result of this, the amount of the IPA supplied to the drying gas producing means (41) by the diaphragm pump (50) is controllable, thus enabling the concentration of the IPA contained in the drying gas to be maintained at a value within a range of from 3% to 80%, inclusive, and enabling the temperature of the drying gas to be maintained at a value within a range of from 80.degree. to 150.degree., inclusive, due to the heating by the heater (44). The above feature enables improvement of the drying efficiency and reduction in the amount of consumption of the drying gas.

대표청구항 ▼

[ What is claimed is:] [1.] A drying treatment method comprising the steps of:supplying a solvent at a controlled flowrate:supplying an inert gas at a controlled flowrate:mixing and heating said solvent and said inert gas to produce a drying gas having a solvent concentration in a range of three per

[ What is claimed is:] [1.] A drying treatment method comprising the steps of:supplying a solvent at a controlled flowrate:supplying an inert gas at a controlled flowrate:mixing and heating said solvent and said inert gas to produce a drying gas having a solvent concentration in a range of three percent to eighty percent and having a temperature of 80 degrees Celsius to 150 degrees Celsius; andsupplying said drying gas into a drying treatment chamber and causing the drying gas to contact an object to be treated, said object contained in the drying treatment chamber, to dry the object.