초록 ▼

On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance matcher. The len

On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance matcher. The length of each of the coil elements corresponds to 1/4 of the wavelength of the RF power supplied from the first RF power source. A second RF power source applies an RF bias voltage to the lower electrode.

대표청구항 ▼

[ We claim:] [1.] An apparatus for performing an inductively-coupled plasma process, said apparatus comprising:a chamber;means for keeping an inside of said chamber vacuous;a sample stage provided in said chamber to support an object to be processed;gas introducing means for introducing gas into sai

[ We claim:] [1.] An apparatus for performing an inductively-coupled plasma process, said apparatus comprising:a chamber;means for keeping an inside of said chamber vacuous;a sample stage provided in said chamber to support an object to be processed;gas introducing means for introducing gas into said chamber;a radio-frequency power source for generating radio-frequency power;a coil having a length which is approximately an integral multiple of 1/4 of a wavelength of said radio-frequency power, said coil generating a magnetic field for changing the gas introduced into said chamber into a plasma when the radio-frequency power from said radio-frequency power source is supplied thereto and a radio-frequency current flows therethrough, said coil having one end connected to said radio-frequency power source via an impedance matcher and the other end grounded,wherein said object comprises a semiconductor substrate, said object being processed using said gas changed into said plasma by said magnetic field.