초록 ▼

Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) in) by connecting to the semiconductor dies with a circ

Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

대표청구항 ▼

[ What is claimed is:] [1.] Method of exercising semiconductor devices, comprising:fabricating a plurality of resilient interconnection elements directly on a plurality of unsingulated semiconductor dies on a semiconductor wafer each interconnection element having(i) a portion attached to a semicond

[ What is claimed is:] [1.] Method of exercising semiconductor devices, comprising:fabricating a plurality of resilient interconnection elements directly on a plurality of unsingulated semiconductor dies on a semiconductor wafer each interconnection element having(i) a portion attached to a semiconductor die,(ii) a resilient section, having an elongate springable shape, extending from the portion, and(iii) a contact region remote from the semiconductor die,the interconnection element being free standing and the contact region being depressible towards the semiconductor wafer due to resilient spring action of the resilient section;exercising at least a portion of the unsingulated semiconductor dies by contacting the respective contact regions of at least some of the interconnection elements and electrically accessing the semiconductor dies through the interconnection elements; andthen singulating the semiconductor dies from the semiconductor wafer.