초록 ▼

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A process for forming a film of material from substrates, said process comprising:forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selecte

[ What is claimed is:] [1.] A process for forming a film of material from substrates, said process comprising:forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth, the stressed region comprising a deposited layer and an implanted region; andproviding energy using a static pressure to a selected region of said substrate to initiate a controlled cleaving action at a cleaving plane within the deposited layer in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.