초록 ▼

Thermal infrared sensors are disclosed for the detection of an incident infrared flux. The sensors include an absorber each including an absorption layer and a thermal sensing element. The incident infrared flux is absorbed by the absorption layer. Heat generated by the absorption is detected by the

Thermal infrared sensors are disclosed for the detection of an incident infrared flux. The sensors include an absorber each including an absorption layer and a thermal sensing element. The incident infrared flux is absorbed by the absorption layer. Heat generated by the absorption is detected by the thermal sensing element such as a thermistor. The absorber is supported above a substrate by supports and bridges, reducing heat transfer from the absorber to the substrate. The supports and bridges include electrical connections to the absorber and the substrate. The supports and bridges are located beneath the absorber so that a large proportion of the area of the absorber is available to absorb the incident flux. Imaging devices including arrays of such sensors and fabrication methods for the sensors and imaging devices are also disclosed.

대표청구항 ▼

[ What is claimed is:] [1.] A thermal infrared sensor for detecting an incident infrared flux, comprising:(a) a substrate comprising a surface and a readout region;(b) an absorber for receiving the incident infrared flux and converting the infrared flux into a heat flux;(c) a thermal sensing element

[ What is claimed is:] [1.] A thermal infrared sensor for detecting an incident infrared flux, comprising:(a) a substrate comprising a surface and a readout region;(b) an absorber for receiving the incident infrared flux and converting the infrared flux into a heat flux;(c) a thermal sensing element to which the absorber is laminated, the thermal sensing element being responsive to the heat flux, configured to convert the heat flux into an electrical signal, and electrically connected to the substrate, wherein the thermal sensing element comprises a polysilicon layer and a contact region, the contact region being formed by diffusing an impurity into the polysilicon layer and outputting the electrical signal to the readout region; and(d) at least one bridge supporting the thermal sensing element above the substrate and forming a gap between the thermal sensing element and the substrate, each bridge comprising an electrically conducting layer and being disposed beneath the absorber so that the respective bridge is hidden by the absorber when viewed from above the absorber.