초록 ▼

Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth c

Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth crucible. The carbon vapor species are provided by either a carbon containing source gas (for example, CN) or by flowing the silicon source vapor over or through a solid carbon source, for example flowing the silicon vapor through porous graphite or a bed of graphite particles.

대표청구항 ▼

[ That which is claimed:] [1.] A method of producing bulk single crystalline SiC comprising:vaporizing Si to produce Si source vapor;introducing the Si source vapor into a crystal growth enclosure containing a crystal growth interface;introducing a CN containing gas into the crystal growth enclosure

[ That which is claimed:] [1.] A method of producing bulk single crystalline SiC comprising:vaporizing Si to produce Si source vapor;introducing the Si source vapor into a crystal growth enclosure containing a crystal growth interface;introducing a CN containing gas into the crystal growth enclosure to provide carbon vapor species; anddepositing vapor species of Si and C on the crystal growth interface under conditions dictating the growth of bulk single crystalline SiC thereon.