|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||102/288 ; 102/289|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 13 인용 특허 : 19|
A gas generant wafer design having a channel region integrally formed into one or both of its sides or faces. Characteristic of the wafer is that the geometric design of the wafer is improved by increasing its cross-section in the same manner that an "I-Beam" increases the structural characteristic of a linear structural member.
[ What is claimed is:] [1.] A gas generant body of gas releasing material in the form of a disc having inner and outer edges and with top and bottom surfaces extending between said inner and outer edges, said top and bottom surfaces having a channel formed therein, wherein said channel is aligned to said top and bottom and is of such a dimension in said top and bottom surfaces that it creates an I-beam structure in cross section thereby increasing the structural characteristics of said body.