초록 ▼

A method of controlling minority carrier lifetime in a semiconductor device in which the density of recombination centers is controlled so that the recombination centers are concentrated in a thin buffer layer adjacent a blocking layer in one of two bonded wafers. The density is controlled by misali

A method of controlling minority carrier lifetime in a semiconductor device in which the density of recombination centers is controlled so that the recombination centers are concentrated in a thin buffer layer adjacent a blocking layer in one of two bonded wafers. The density is controlled by misaligning crystal axes of the two wafers or by doping the bonding surface of one of the wafers before the wafers are bonded. Both methods generate recombination centers in the thin buffer layer that forms around or adjacent the bonding interface. A semiconductor device made by this method includes a buffer layer with a significantly higher density of recombination centers than the adjacent blocking layer to thereby improve control of minority carrier lifetime.

대표청구항 ▼

[ What is claimed is:] [1.] A method of controlling minority carrier lifetime in a semiconductor device, comprising the step of: controlling a density of recombination centers at a wafer-to-wafer bonding interface adjacent a blocking layer of the semiconductor device so that the recombination center

[ What is claimed is:] [1.] A method of controlling minority carrier lifetime in a semiconductor device, comprising the step of: controlling a density of recombination centers at a wafer-to-wafer bonding interface adjacent a blocking layer of the semiconductor device so that the recombination centers are concentrated in a buffer layer adjacent the blocking layer.