초록 ▼

Pure silicon feedstock is melted and vaporized in a physical vapor transport furnace. In one embodiment the vaporized silicon 46 is reacted with a high purity carbon member 74, such as a porous carbon disc, disposed directly above the silicon. The gaseous species resulting from the reaction are depo

Pure silicon feedstock is melted and vaporized in a physical vapor transport furnace. In one embodiment the vaporized silicon 46 is reacted with a high purity carbon member 74, such as a porous carbon disc, disposed directly above the silicon. The gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal 50 axially located above the disc, resulting in the growth of monocrystalline silicon carbide 56. In another embodiment, one or more gases, which may include a carbon-containing gas, are additionally introduced at 84 into the furnace, such as into a reaction zone above the disc, to participate in the growth process.

대표청구항 ▼

[ What is claimed is:] [4.] Apparatus for growing high purity silicon carbide crystals, comprising:(A) a crystal growth furnace having a central longitudinal axis;(B) a source of high purity silicon at a first location within said furnace;(C) a seed crystal at a second location displaced from said f

[ What is claimed is:] [4.] Apparatus for growing high purity silicon carbide crystals, comprising:(A) a crystal growth furnace having a central longitudinal axis;(B) a source of high purity silicon at a first location within said furnace;(C) a seed crystal at a second location displaced from said first location, within said furnace;(D) a heating system operable to heat said silicon to a temperature sufficient to cause melting and vaporization of said silicon;(E) a high purity porous carbon-containing member disposed between said source of high purity silicon and said seed crystal such that said vaporized silicon passes through said porous carbon-containing member;(F) means for introducing at least one gas into said furnace system, said gas being selected from the group consisting of an inert gas, a carrier gas and a carbon-containing gas;(G) said heating system being operable to produce a temperature distribution within said furnace system whereby products of any reaction of said vaporized silicon and a said gas are driven toward said seed crystal.