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Field emission electron source 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01J-001/30
출원번호 US-0884450 (1997-06-27)
발명자 / 주소
  • Zettl Alexander Karlwalter
  • Cohen Marvin Lou
출원인 / 주소
  • The Regents of the University of California
대리인 / 주소
    Coudert Brothers
인용정보 피인용 횟수 : 171  인용 특허 : 3

초록

A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not

대표청구항

[ Based on the invention described above, we claim:] [21.] A field emission electron source comprising,a) a volume of binder;b) a volume of B.sub.X C.sub.Y N.sub.Z nanotubes suspended in the binder, where x, y, and z are numbers that indicate the relative ratios of boron, carbon, and nitrogen; andc)

이 특허에 인용된 특허 (3)

  1. Rabinowitz Mario, Emissive flat panel display with improved regenerative cathode.
  2. Rabinowitz Mario (715 Lakemead Way Redwood City CA 94062), Emissive flat panel display with improved regenerative cathode.
  3. Debe Mark K., Field emission device having nanostructured emitters.

이 특허를 인용한 특허 (171)

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