초록 ▼

Measurement of contaminating nitrogen during silicon ion implantation has been achieved by including a silicon wafer as a monitor in the implantation chamber. After silicon ion implantation, the monitor is subjected to a rapid thermal oxidation (about 1,100.degree. C. for one minute) and the thickne

Measurement of contaminating nitrogen during silicon ion implantation has been achieved by including a silicon wafer as a monitor in the implantation chamber. After silicon ion implantation, the monitor is subjected to a rapid thermal oxidation (about 1,100.degree. C. for one minute) and the thickness of the resulting grown oxide layer is measured. The thinner the oxide layer (relative to an oxide layer grown on pure silicon) the greater the degree of nitrogen contamination. For example, a reduction in oxide thickness of about 30 Angstroms corresponds to a nitrogen dosage of about 10.sup.13 atoms/sq. cm. By measuring total ion dosage during implantation and then subtracting the measured nitrogen dosage, the corrected silicon dosage may also be computed.

대표청구항 ▼

[ What is claimed is:] [1.] A method to monitor nitrogen dosage in a process wafer during silicon ion implantation, comprising:providing a silicon wafer;placing the process wafer and the silicon wafer in an ion implantation chamber;simultaneously implanting silicon ions into the process wafer and th

[ What is claimed is:] [1.] A method to monitor nitrogen dosage in a process wafer during silicon ion implantation, comprising:providing a silicon wafer;placing the process wafer and the silicon wafer in an ion implantation chamber;simultaneously implanting silicon ions into the process wafer and the silicon wafer, said ions having voltage and an accumulated dosage;subjecting the silicon wafer to rapid thermal oxidation, thereby growing a layer of silicon oxide on a surface of said silicon wafer;determining a thickness value for said silicon oxide layer; andcomputing a dosage value for nitrogen implanted in the silicon wafer from said thickness value.