초록 ▼

A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also inclu

A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also includes removing residues from interior surfaces of the chamber 12 by forming a volatile product from the residues and at least one of the cleaning gases.

대표청구항 ▼

[ What is claimed is:] [1.] A method for cleaning a residue from an interior surface of a chemical vapor deposition apparatus, said method comprising steps of:introducing into a chamber of said chemical vapor deposition apparatus cleaning gases comprising N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and f

[ What is claimed is:] [1.] A method for cleaning a residue from an interior surface of a chemical vapor deposition apparatus, said method comprising steps of:introducing into a chamber of said chemical vapor deposition apparatus cleaning gases comprising N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from said cleaning gases; andremoving from said chamber a volatile product of said residue formed by an interaction with said residue and at least one of said cleaning gases.