초록 ▼

Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N, C on multiple nucleation sites that are preferentially cooled to a temperature less than the surrounding surfaces in the crystal growth enclosure. Th

Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N, C on multiple nucleation sites that are preferentially cooled to a temperature less than the surrounding surfaces in the crystal growth enclosure. The vapor species may be provided by subliming solid source material, vaporizing liquid Al, Si or Al--Si or injecting source gases. The multiple nucleation sites may be unseeded or seeded with a seed crystal such as 4 H or 6 H SiC.

대표청구항 ▼

[ That which is claimed:] [1.] A method of producing bulk single crystals of AlN.sub.x :SiC.sub.y where x+y=1 and x is 1.fwdarw.0 and y is 0.fwdarw.1, comprising the steps of:providing in a crystal growth enclosure vapor species of selected elements Al, Si, N and C necessary to grow bulk single crys

[ That which is claimed:] [1.] A method of producing bulk single crystals of AlN.sub.x :SiC.sub.y where x+y=1 and x is 1.fwdarw.0 and y is 0.fwdarw.1, comprising the steps of:providing in a crystal growth enclosure vapor species of selected elements Al, Si, N and C necessary to grow bulk single crystals;providing multiple nucleation sites in the crystal growth enclosure;preferentially cooling the nucleation sites to a temperature less than surrounding surfaces in the crystal growth enclosure; anddepositing the vapor species under conditions dictating the growth of single crystalline AlN.sub.x :SiC.sub.y originating at the respective nucleation sites.