초록 ▼

In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of

In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.

대표청구항 ▼

[ We claim:] [1.] An electro-optical apparatus comprising;a substrate;a matrix of pixel regions formed on the substrate;a transistor having a gate electrode and a channel region provided to each of the matrix of pixel regions;a first scanning signal line electrically connected to the sate electrode

[ We claim:] [1.] An electro-optical apparatus comprising;a substrate;a matrix of pixel regions formed on the substrate;a transistor having a gate electrode and a channel region provided to each of the matrix of pixel regions;a first scanning signal line electrically connected to the sate electrode of said transistor; anda semiconductor layer constituting the channel region of the transistor formed on the substrate, the semiconductor layer being electrically connected to a second scanning signal line.