초록 ▼

The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly

The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly on the thin metal layer through an opening that is formed in the passivation layer.

대표청구항 ▼

[ We claim:] [1.] A vertical current flow power semiconductor device comprising:a semiconductor substrate comprising a two-dimensional array of transistor cells, each of said cells comprising a first region of a first conductivity type and a body region of a second conductivity type opposite to said

[ We claim:] [1.] A vertical current flow power semiconductor device comprising:a semiconductor substrate comprising a two-dimensional array of transistor cells, each of said cells comprising a first region of a first conductivity type and a body region of a second conductivity type opposite to said first conductivity type, a periphery of said array defining an area of a top surface of said substrate;a bilayer structure comprising a thick metal layer and a thin metal layer and at least one adhesion layer between said thick metal layer and said thin metal layer, said thick metal layer comprising a first metal and said thin metal layer comprising a second metal, said bilayer structure overlying the entirety of said area, said thin metal layer being in electrical contact with each of said cells, said thick metal layer having a thickness greater than a thickness of said thin metal layer, a bottom surface of said thick metal layer being in continuous, uninterrupted physical contact with a top surface of said thin metal layer throughout said area; anda bond wire electrically connected to said thick metal layer.