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There is disclosed a compound semiconductor light-emitting device of gallium nitride series having high reliability, which can be operated by a low threshold current and a low operation voltage without deterioration. The device comprises a p-type semiconductor structure having high carrier concentra

There is disclosed a compound semiconductor light-emitting device of gallium nitride series having high reliability, which can be operated by a low threshold current and a low operation voltage without deterioration. The device comprises a p-type semiconductor structure having high carrier concentration, which can easily form a low resistance p-side electrode, and which can uniformly implant carriers to an active layer highly efficiently. A p electrode contact layer having Mg added thereto is used as a p-type semiconductor layer. At least a Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0

대표청구항 ▼

[ We claim:] [1.] A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N: x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) comprising:an n-type semiconductor layer having at least an n-type clad layer;an active layer formed on said n-type semiconduct

[ We claim:] [1.] A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N: x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) comprising:an n-type semiconductor layer having at least an n-type clad layer;an active layer formed on said n-type semiconductor layer;a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0