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Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
출원번호 US-0270749 (1999-03-17)
우선권정보 JP-0036830 (1999-02-16)
발명자 / 주소
  • Terashima Kazutaka,JPX
  • Nishimura Suzuka,JPX
  • Tsuzaki Takuji,JPX
  • Udagawa Takashi,JPX
출원인 / 주소
  • Showa Denko K.K., JPX
대리인 / 주소
    Sughrue, Mion, Zinn, Macpeak & Seas, PLLC
인용정보 피인용 횟수 : 97  인용 특허 : 2

초록

A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a

대표청구항

[ What is claimed is:] [1.] A method of growing a group III nitride semiconductor crystal layer comprising:a step of growing a first buffer layer composed of boron phosphide (composition formula: BP) on a silicon (Si) single crystal substrate by a vapor phase growth method at a temperature of not lo

이 특허에 인용된 특허 (2)

  1. Nagano Katsuto (Yokohama JPX) Ihaya Kazuhiko (Tokyo JPX) Sasa Syozo (Ichikawa JPX) Nakada Takeshi (Tokyo JPX), Method for the epitaxial growth of boron phosphorous semiconductors.
  2. Hatano Ako (Tokyo JPX) Izumiya Toshihide (Tokyo JPX) Ohba Yasuo (Yokohama JPX), Method of manufacturing III-IV group compound semiconductor device.

이 특허를 인용한 특허 (97)

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