Alloy target, its fabrication, and regeneration processes
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C22C-033/02
출원번호
US-0033173
(1998-03-02)
우선권정보
JP-0070612 (1997-03-07)
발명자
/ 주소
Kawaguchi Yukio,JPX
출원인 / 주소
TDKCorporation, JPX
대리인 / 주소
Laubscher & LaubscherLasker, Esq.
인용정보
피인용 횟수 :
53인용 특허 :
11
초록▼
An alloy target comprises at least one rare earth metal element Tb, Dy, Gd, Sm, Nd, Ho, Tm, and Er with a substantial balance of a transition metal element such as Fe, Co and Ni, and has a substantially homogeneous sintered structure and a permeability of 3 or lower. The alloy target is fabricated b
An alloy target comprises at least one rare earth metal element Tb, Dy, Gd, Sm, Nd, Ho, Tm, and Er with a substantial balance of a transition metal element such as Fe, Co and Ni, and has a substantially homogeneous sintered structure and a permeability of 3 or lower. The alloy target is fabricated by a process comprising steps of melting in a high-frequency furnace or crucible furnace, quenching, pulverization, and firing under pressure. After the alloy target has been used up, it is regenerated by mixing alloy powders (to be regenerated) obtained by the mechanical pulverization of the used-up target with the alloy powders obtained at the pulverization step of the aforesaid process to obtain a mixture, and firing the mixture under pressure.
대표청구항▼
[ What I claim is:] [1.] An alloy target used to form a magneto-optical recording layer by a magnetron sputtering technique, which comprises 20 to 30 at % of at least one rare earth metal element selected from the group consisting of terbium, dysprosium, gadolinium, samarium, neodymium, holmium, thu
[ What I claim is:] [1.] An alloy target used to form a magneto-optical recording layer by a magnetron sputtering technique, which comprises 20 to 30 at % of at least one rare earth metal element selected from the group consisting of terbium, dysprosium, gadolinium, samarium, neodymium, holmium, thulium and erbium with a substantial balance of a transition metal element necessarily including at least one element selected from the group consisting of iron, cobalt and nickel, and has a substantially homogeneous sintered structure in sheet form having a thickness of at least 8 mm and a permeability of up to 3.
Demaray,Richard E.; Zhang,Hong Mei; Narasimhan,Mukundan; Milonopoulou,Vassiliki, Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides.
Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
Yi, Wuwen; Heckman, William; Kunkel, Bernd; Derrington, Carl; Griffin, Patrick, Methodology for recycling Ru and Ru-alloy deposition targets and targets made of recycled Ru and Ru-based alloy powders.
Brantner, Paul C.; Keating, Joseph A.; Johnson, Raymond R.; Bradow, Timothy N.; Narayan, Prativadi B.; Neudecker, Bernd J., Passive over/under voltage control and protection for energy storage devices associated with energy harvesting.
Demaray, Richard E.; Wang, Kai-An; Mullapudi, Ravi B.; Stadtler, Douglas P.; Zhang, Hongmei; Pethe, Rajiv, Planar optical devices and methods for their manufacture.
Scheible, Kathleen; Flanigan, Michael Allen; Yoshidome, Goichi; Allen, Adolph Miller; Pavloff, Cristopher M., Process kit and target for substrate processing chamber.
Johnson, Raymond R.; Snyder, Shawn W.; Brantner, Paul C.; Bradow, Timothy J.; Neudecker, Bernd J., Thin film battery on an integrated circuit or circuit board and method thereof.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.