초록 ▼

A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive mater

A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

대표청구항 ▼

[ What is claimed is:] [1.] A method for preventing poisoned trenches and vias, the method comprising;providing a substrate, wherein the substrate further comprises a conducting layer;forming a dielectric layer on the substrate;forming a trench and a via hole in the dielectric layer, wherein the tre

[ What is claimed is:] [1.] A method for preventing poisoned trenches and vias, the method comprising;providing a substrate, wherein the substrate further comprises a conducting layer;forming a dielectric layer on the substrate;forming a trench and a via hole in the dielectric layer, wherein the trench and the via hole form an opening, and wherein the via hole exposes the conducting layer;performing an electron-beam process to cure and densify the dielectric layer exposed in the opening; and thenfilling the opening with a conductive material to form a dual damascene structure.