초록 ▼

After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating i

After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

대표청구항 ▼

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device comprising the steps of:forming a non-single crystalline semiconductor film on an insulating surface;providing said semiconductor film with a catalyst material which is capable of promoting crystallization of said semicondu

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device comprising the steps of:forming a non-single crystalline semiconductor film on an insulating surface;providing said semiconductor film with a catalyst material which is capable of promoting crystallization of said semiconductor film;performing a first crystallization of said semiconductor film provided with said catalyst material;performing a second crystallization of said semiconductor film after said first crystallization in an atmosphere containing a halogen compound gas in order to reduce a concentration of said catalyst material in said semiconductor film.