$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Indium gallium nitride light emitting diode 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0071519 (1998-05-04)
발명자 / 주소
  • Ming-Jiunn Jou,TWX
  • Biing-Jye Lee,TWX
  • Tarn Jacob C.,TWX
  • Chuan-Ming Chang,TWX
  • Chia-Cheng Liu,TWX
출원인 / 주소
  • Epistar Co., TWX
대리인 / 주소
    Lin, Patent Agent
인용정보 피인용 횟수 : 129  인용 특허 : 6

초록

A transparent conductive layer is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and to reduce the series resistance. Tin indium oxide can be used as the transparent conductive layer. The transparent conductive layer is particularly applicable t

대표청구항

[ What is claimed is:] [1.] A light emitting diode, comprising:a transparent insulating substrate;a first conductivity type GaN as a buffer directly over said transparent insulating substrate;a first conductivity type (Al)GaN as a lower cladding layer directly over said first conductivity type GaN;a

이 특허에 인용된 특허 (6)

  1. Nitta Koichi,JPX, Blue light-emitting device.
  2. Tamaki Makoto (Inazawa JPX) Kozawa Takahiro (Owariasahi JPX), Gallium nitride-based compound semiconductor light-emitting device and method for making the same.
  3. Nakamura Shuji,JPX ; Mukai Takashi,JPX ; Iwasa Naruhito,JPX, Light-emitting gallium nitride-based compound semiconductor device.
  4. Nitta Koichi,JPX ; Ishimatsu Sumio,JPX, Method of manufacturing blue light-emitting device by using BCL3 and CL2.
  5. Satoh Shunichi (Miyagi-Ken JPX) Takahashi Takashi (Tsukuba JPX) Iechi Hiroyuki (Sendai JPX) Yoshida ; deceased Tomoaki (late of Natori JPX) Yoshida ; legal representative Chizuru (Yokohama JPX) Iwata, Optical line printhead and an LED chip used therefor.
  6. Kume Masahiro,JPX ; Ban Yuuzaburou,JPX ; Ishibashi Akihiko,JPX ; Uemura Nobuyuki,JPX ; Takeisi Hidemi,JPX ; Kidoguchi Isao,JPX, Semiconductor laser device.

이 특허를 인용한 특허 (129)

  1. Louderback,Duane A.; Guilfoyle,Peter, Broad temperature WDM transmitters and receivers for coarse wavelength division multiplexed (CWDM) fiber communication systems.
  2. Huang, Wingo; Li, Youming, Contact structure for group III-V semiconductor devices and method of producing the same.
  3. Yoo, Myung Cheol, Diode having high brightness and method thereof.
  4. Yoo, Myung Cheol, Diode having high brightness and method thereof.
  5. Yoo, Myung Cheol, Diode having high brightness and method thereof.
  6. Yoo, Myung Cheol, Diode having high brightness and method thereof.
  7. Yoo, Myung Cheol, Diode having high brightness and method thereof.
  8. Yoo,Myung Cheol, Diode having high brightness and method thereof.
  9. Yoo, Myung Cheol, Diode having vertical structure.
  10. Yoo, Myung Cheol, Diode having vertical structure.
  11. Yoo, Myung Cheol, Diode having vertical structure.
  12. Yoo, Myung Cheol, Diode having vertical structure and method of manufacturing the same.
  13. Yoo, Myung Cheol, Diode having vertical structure and method of manufacturing the same.
  14. Yoo, Myung Cheol, Diode having vertical structure and method of manufacturing the same.
  15. Yoo, Myung Cheol, Diode having vertical structure and method of manufacturing the same.
  16. Yoo, Myung Cheol, Diode having vertical structure and method of manufacturing the same.
  17. Ying Che Sung TW; Weng Ming Liu TW, Electrode structure of compound semiconductor device.
  18. Venugopalan,Hari S.; Eliashevich,Ivan, Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts.
  19. Chua, Soo Jin; Li, Peng; Hao, Maosheng; Zhang, Ji, Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD).
  20. Chua, Soo Jin; Li, Peng; Hao, Maosheng; Zhang, Ji, Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD).
  21. Shin, Hyoun Soo, GaN LED for flip-chip bonding and method of fabricating the same.
  22. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
  23. Kim, Seong Jae, Gallium nitride based light emitting diode.
  24. Edmond,John Adam; Doverspike,Kathleen Marie; Kong,Hua shuang; Bergmann,Michael John, Group III nitride LED with silicon carbide substrate.
  25. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
  26. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
  27. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
  28. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer (5000.137).
  29. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-Shuang; Bergmann, Michael John; Emerson, David Todd, Group III nitride LED with undoped cladding layer and multiple quantum well.
  30. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John; Emerson, David Todd, Group III nitride LED with undoped cladding layer and multiple quantum well.
  31. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride light emitting devices with gallium-free layers.
  32. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride light emitting devices with progressively graded layers.
  33. Udagawa,Takashi, Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electro.
  34. Wu,Jen Chau; Tu,Chung Cheng; Huang,Pao i, High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof.
  35. Chuang, Chia-Ming; Huo, Donald Tai-Chan; Chang, Chia-Chen; Yang, Tzu-Ling; Ou, Chen, High-efficiency light-emitting device and manufacturing method thereof.
  36. Ou,Chen; Lin,Ting Yang; Chang,Jia Rong; Lai,Shih Kuo, High-efficiency light-emitting element.
  37. Bergmann, Michael John; Driscoll, Daniel Carleton; Emerson, David Todd, Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices.
  38. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking.
  39. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
  40. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
  41. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
  42. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
  43. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
  44. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., LED system and method.
  45. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M., LED system and method.
  46. Choo, Sung Ho; Jang, Ja Soon, Light device and fabrication method thereof.
  47. Tu,Chuan Cheng; Young,Cheng Chung; Huang,Pao I; Wu,Jen Chau, Light emitting device.
  48. Choi, Kwang Ki; Jeong, Hwan Hee; Lee, Sang Youl; Song, June O; Moon, Ji hyung; Jung, Se Yeon; Seong, Tae-Yeon, Light emitting device and method of fabricating the same.
  49. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Light emitting devices with Group III nitride contact layer and superlattice.
  50. Sung, Shu-Wen; Ku, Chin-Fu; Liu, Chia-Cheng; Hsieh, Min-Hsun; Huang, Chao-Nien; Ou, Chen; Chang, Chuan-Ming, Light emitting diode having an insulating substrate.
  51. Bergmann, Michael John; Haberern, Kevin Ward; Williams, Bradley E.; Parker, Winston T.; Pun, Arthur Fong-Yuen; Suh, Doowon; Donofrio, Matthew, Light emitting diodes including integrated backside reflector and die attach.
  52. Kim, Yu-Sik; Park, Sang-Joon, Light emitting element, a light emitting device, a method of manufacturing a light emitting element and a method of manufacturing a light emitting device.
  53. Wong, William S.; Kneissl, Michael A.; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff, Light emitting structure including high-al content MQWH.
  54. Hsu, Tzu-Chieh; Tao, Ching-San; Ou, Chen; Hsieh, Min-Hsun; Chen, Chao Hsing, Light-emitting device.
  55. Hsu, Tzu-Chieh; Tao, Ching-San; Ou, Chen; Hsieh, Min-Hsun; Chen, Chao-Hsing, Light-emitting device.
  56. Hsu, Tzu-Chieh; Tao, Ching-San; Ou, Chen; Hsieh, Min-Hsun; Chen, Chao-Hsing, Light-emitting device.
  57. Kuo, De-Shan; Tu, Chun-Hsiang; Chiu, Po-Shun; Ko, Chun-Teng; Hsieh, Min-Hsun, Light-emitting device.
  58. Ou,Chen; Lin,Ting Yang; Lai,Shih Kuo, Light-emitting device.
  59. Hsu, Tzu-Chieh; Tao, Ching-San; Ou, Chen; Hsieh, Min-Hsun; Chen, Chao-Hsing, Light-emitting device with high light extraction.
  60. Hsiao, Chia-Lin; Hsu, Nai-Wei; Wang, Te-Chung; Yang, Tsung-Yu, Light-emitting diode and method for manufacturing the same.
  61. Hisaki Kato JP; Hiroshi Watanabe JP; Norikatsu Koide JP; Shinya Asami JP, Light-emitting semiconductor device using gallium nitride compound semiconductor.
  62. Kato, Hisaki; Watanabe, Hiroshi; Koide, Norikatsu; Asami, Shinya, Light-emitting semiconductor device using gallium nitride compound semiconductor.
  63. Kato,Hisaki; Watanabe,Hiroshi; Koide,Norikatsu; Asami,Shinya, Light-emitting semiconductor device using gallium nitride compound semiconductor.
  64. Wong,William S.; Kneissl,Michael A.; Teepe,Mark, Method for controlling the structure and surface qualities of a thin film and product produced thereby.
  65. Chai,Bruce H. T.; Gallagher,John Joseph; Hill,David Wayne, Method for making Group III nitride devices and devices produced thereby.
  66. Yoo, Myung Cheol, Method of fabricating vertical devices using a metal support film.
  67. Yoo, Myung Cheol, Method of fabricating vertical devices using a metal support film.
  68. Yoo, Myung Cheol, Method of fabricating vertical devices using a metal support film.
  69. Ushida, Yasuhisa; Shinoda, Daisuke; Yamazaki, Daisuke; Hirata, Koji; Ikemoto, Yuhei; Shibata, Naoki; Aoki, Kazuo; Garcia Villora, Encarnacion Antonia; Shimamura, Kiyoshi, Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device.
  70. Chen, John; Liang, Bingwen; Shih, Robert, Method of forming a window for a gallium nitride light emitting diode.
  71. Cho, Jae-hee; Leem, Dong-seok; Seong, Tae-yeon; Sone, Cheol-soo, Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer.
  72. Yoo, Myung Cheol, Method of making diode having reflective layer.
  73. Yoo, Myung Cheol, Method of making diode having reflective layer.
  74. Yoo, Myung Cheol, Method of making diode having reflective layer.
  75. Wong, William S.; Kneissl, Michael A.; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff, Method of manufacturing a semiconductor device including a superlattice strain relief layer.
  76. Sugiyama,Hitoshi; Ohashi,Kenichi; Yamashita,Atsuko; Washizuka,Shoichi; Akaike,Yasuhiko; Yoshitake,Shunji; Asakawa,Koji; Egashira,Katsumi; Fujimoto,Akira, Method of manufacturing a semiconductor light-emitting element.
  77. Chua, Christopher L.; Yang, Zhihong; Johnson, Noble M., Mixed alloy defect redirection region and devices including same.
  78. Wierer, Jr.,Jonathan J.; Krames,Michael R; Rudaz,Serge L, Multi-layer highly reflective ohmic contacts for semiconductor devices.
  79. Hata, Toshio; Yamamoto, Kensaku; Morimoto, Taiji, Nitride gallium compound semiconductor light emission device.
  80. Lee, Suk Hun, Nitride semiconductor light emitting device and fabrication method thereof.
  81. Fudeta, Mayuko; Hata, Toshio, Nitride-based semiconductor light-emitting device and manufacturing method thereof.
  82. Fudeta, Mayuko; Hata, Toshio, Nitride-based semiconductor light-emitting device and manufacturing method thereof.
  83. Lin, Li Min; Chan, Ka Wah; Zheng, Sheng Mei; Cai, Yong, Optimization of polishing stop design.
  84. Lutgen, Stephan; Eichler, Christoph; Schillgalies, Marc; Queren, Desiree, Optoelectronic semiconductor chip and method for the production thereof.
  85. Jacob, Ulrich; Kräuter, Gertrud; Plössl, Andreas, Radiation-emitting optical component.
  86. Bader,Stefan; Dumitru,Viorel; H채rle,Volker; Kuhn,Bertram; Lell,Alfred; Off,J체rgen; Scholz,Ferdinand; Schweizer,Heinz, Radiation-emitting semiconductor component and method for making same.
  87. Fehrer, Michael; Strauss, Uwe, Semiconductor chip and method for producing a semiconductor chip.
  88. Choo, Sung Ho; Jang, Ja Soon, Semiconductor light device and fabrication method thereof.
  89. Huang,Pao I; Tu,Chuan Cheng; Wu,Jen Chau, Semiconductor light emitting device and method of making the same.
  90. Huh, Chul; Park, Rae Man; Shin, Jae Heon; Kim, Kyung Hyun; Kim, Tae Youb; Cho, Kwan Sik; Sung, Gun Yong, Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same.
  91. Yamasaki, Yukio; Ito, Shigetoshi, Semiconductor light emitting element, display device and optical information reproduction device using the same, and fabrication method of semiconductor light emitting element.
  92. Takeuchi, Ryouichi; Mitani, Kazuhiro; Nabekura, Wataru; Udagawa, Takashi; Hoshina, Takaharu, Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp.
  93. Takeuchi, Ryouichi; Mitani, Kazuhiro; Nabekura, Wataru; Udagawa, Takashi; Hoshina, Takaharu, Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp.
  94. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  95. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  96. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  97. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  98. Chen, Lung-Chien; Lan, Wen-How; Chien, Fen-Ren, Structure and manufacturing method for GaN light emitting diodes.
  99. Lai,Mu Jen; Hon,Schang Jing; Sun,Hsueh Feng; Yang,Shih Ming, Structure and manufacturing of gallium nitride light emitting diode.
  100. Wong, William S.; Kneissl, Michael A.; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff, Superlattice strain relief layer for semiconductor devices.
  101. Ko, Hyunchul; Johnson, Randall E.; Duong, Dung T.; Winberg, Paul N., System and method for a lens and phosphor layer.
  102. Duong, Dung T.; Ko, Hyunchul; Johnson, Randall E.; Winberg, Paul N.; Radkov, Emil, System and method for color mixing lens array.
  103. Duong, Dung T.; Ko, Hyunchul; Johnson, Randall E.; Winberg, Paul N.; Radkov, Emil, System and method for color mixing lens array.
  104. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M.; Khizar, Muhammad, System and method for emitter layer shaping.
  105. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M.; Khizar, Muhammad, System and method for emitter layer shaping.
  106. Duong, Dung T.; Winberg, Paul N.; Vaz, Oscar, Systems and methods for packaging light-emitting diode devices.
  107. Song,June o; Leem,Dong suk; Seong,Tae yeon, Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and.
  108. Song, June o; Leem, Dong suk; Seong, Tae yeon, Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same.
  109. Yoo, Myung Cheol, Thin film light emitting diode.
  110. Yoo, Myung Cheol, Thin film light emitting diode.
  111. Yoo, Myung Cheol, Thin film light emitting diode.
  112. Yoo, Myung Cheol, Thin film light emitting diode.
  113. Yoo, Myung Cheol, Thin film light emitting diode.
  114. Yoo, Myung Cheol, Thin film light emitting diode.
  115. Shin, Sung-Bok, Transparent LED wafer module and method for manufacturing same.
  116. Lee, Jong Lam; Jeong, In-kwon; Yoo, Myung Cheol, Vertical structure LEDs.
  117. Lee, Jong Lam; Jeong, In-kwon; Yoo, Myung Cheol, Vertical structure LEDs.
  118. Lee, Jong Lam; Jeong, In-kwon; Yoo, Myung Cheol, Vertical structure LEDs.
  119. Lee, Jong Lam; Jeong, In-kwon; Yoo, Myung Cheol, Vertical structure LEDs.
  120. Yoo, Myung Cheol, Vertical topology light emitting device.
  121. Yoo, Myung Cheol, Vertical topology light emitting device.
  122. Yoo, Myung Cheol, Vertical topology light emitting device.
  123. Yoo, Myung Cheol, Vertical topology light emitting device.
  124. Yoo, Myung Cheol, Vertical topology light emitting device.
  125. Yoo, Myung Cheol, Vertical topology light emitting device.
  126. Yoo, Myung Cheol, Vertical topology light emitting device using a conductive support structure.
  127. Yoo, Myung Cheol, Vertical topology light-emitting device.
  128. Yoo, Myung Cheol, Vertical topology light-emitting device.
  129. Chen, John; Liang, Bingwen; Shih, Robert, Window for gallium nitride light emitting diode.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로