초록 ▼

A substrate 20 in a process chamber 42 is processed at process conditions suitable for processing a layer 30 on the substrate 20, the process conditions comprising one or more of process gas composition and flow rates, power levels of process gas energizers, process gas pressure, and substrate tempe

A substrate 20 in a process chamber 42 is processed at process conditions suitable for processing a layer 30 on the substrate 20, the process conditions comprising one or more of process gas composition and flow rates, power levels of process gas energizers, process gas pressure, and substrate temperature. The intensity of a reflected light beam 78 reflected from the layer 30 on the substrate 20 is measured over time, to determine a measured waveform pattern. The measured waveform pattern is compared to a pretetermined characteristic waveform pattern, and when the two waveform patterns are similar or substantially the same, the process conditions are changed to change a rate of processing or a process selectivity ratio of the layer 30 on the substrate 20 before the entire layer 30 is completely processed.

대표청구항 ▼

[ What is claimed is:] [1.] A method of etching a layer on a substrate substantially without etching or damaging an underlayer, the method comprising the steps of:(a) placing the substrate in a process zone;(b) providing in the process zone, an energized process gas comprising etchant gas and cleani

[ What is claimed is:] [1.] A method of etching a layer on a substrate substantially without etching or damaging an underlayer, the method comprising the steps of:(a) placing the substrate in a process zone;(b) providing in the process zone, an energized process gas comprising etchant gas and cleaning gas, to etch the layer on the substrate;(c) detecting an etching endpoint immediately prior to etching through the entire layer on the substrate; and(d) changing the composition of the process gas to remove the cleaning gas, to etch the remaining portion of the layer substantially without damaging the underlayer.