초록 ▼

Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. I

Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

대표청구항 ▼

[ What is claimed is:] [1.] A thin-film transitor comprising:a non-single crystalline semiconductor film comprising silicon and containing a catalyst material which is capable of promoting crystallization of silicon, said semiconductor film having crystallinity;a gate insulating film adjacent to sai

[ What is claimed is:] [1.] A thin-film transitor comprising:a non-single crystalline semiconductor film comprising silicon and containing a catalyst material which is capable of promoting crystallization of silicon, said semiconductor film having crystallinity;a gate insulating film adjacent to said semiconductor film; anda gate electrode adjacent to said insulating film;wherein concentration of said material does not exceed 1.times.10.sup.19 atom/cm.sup.3.