초록 ▼

An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulating layers an

An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulating layers and formed between the conductive coating and the source line. According to one aspect of the invention, an auxiliary capacitor is formed by the metal interconnection and the conductive coating serving as both electrodes and at least the lower insulating layer film serving as a dielectric. The auxiliary capacitor is formed in a region of the interlayer insulating film in which the upper insulating layer has been removed by etching. According to another aspect of the invention, the conductive coating has a portion that is in contact with the lower insulating layer in a region where the conductive coating coextends with the metal interconnection.

대표청구항 ▼

[ What is claimed is:] [1.] An active matrix device comprising:a gate line formed over a substrate;a source line formed over said gate line;a switching element including a thin film transistor formed at an intersection between said gate line and said source line wherein said source line is electrica

[ What is claimed is:] [1.] An active matrix device comprising:a gate line formed over a substrate;a source line formed over said gate line;a switching element including a thin film transistor formed at an intersection between said gate line and said source line wherein said source line is electrically connected to a source of said switching element;a metal interconnection electrically connected to a drain of said switching element wherein said metal interconnection is positioned in a same layer as said source line;an interlayer insulating film comprising lower and upper insulating layers formed over said source line, said metal interconnection and said switching element, wherein said upper insulating layer has an opening to expose said lower insulating layer in said opening;a light blocking conductive film formed on said interlayer insulating film, further comprising a capacitor formed at said opening between said light blocking conductive film and said metal interconnection with said lower insulating layer interposed therebetween; anda pixel electrode electrically connected to said metal interconnection and located over said light blocking conductive film,wherein said switching element and said capacitor are provided in a region of a pixel where disclination is likely to occur.