초록 ▼

A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. I

A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

대표청구항 ▼

[ What is claimed is:] [1.] A substrate processing system comprising:a housing for forming a vacuum chamber;a substrate holder, located within said housing, for holding a substrate;a gas distributor for introducing a process gas into said vacuum chamber to deposit a layer over said substrate;a gas m

[ What is claimed is:] [1.] A substrate processing system comprising:a housing for forming a vacuum chamber;a substrate holder, located within said housing, for holding a substrate;a gas distributor for introducing a process gas into said vacuum chamber to deposit a layer over said substrate;a gas mixing chamber, coupled to said gas distributor, in which a plurality of gases intermingle to form said process gas;a gas distribution system, coupled to said gas mixing chamber, for introducing said plurality of gases into said gas mixing chamber;a heater for heating said substrate;a vacuum system for setting and maintaining a pressure level within said vacuum chamber;an RF power supply to form a plasma from said process gas, said RF power supply capable of providing a first, high frequency RF power signal and a second, lower frequency RF power signal;a controller for controlling said gas distribution system, said heater, said RF power supply and said vacuum system; anda memory coupled to said controller and storing a program for directing operation of said chemical vapor deposition reactor system, said program including:a first set of instructions for controlling said heater to heat said substrate to a temperature of between about 200-500.degree. C.;a second set of instructions for controlling said vacuum system to set and maintain said vacuum chamber at a pressure of between about 1-100 torr;a third set of instructions for controlling said gas distribution system to introduce gases comprising silicon, oxygen, a halogen and helium into said gas mixing chamber; anda fourth set of instructions for driving said first RF power signal at between about 25-500 Watts and for driving said second RF power signal at 100 Watts or above to form a plasma from said process gas and deposit said layer over said substrate;whereby said third set of instructions controls said gas distribution system to introduce helium into said chamber at a selected rate to stabilize said deposited layer such that substantially no HF outgasses from said layer when said layer is subsequently heated to a temperature of up to at least 450 degrees Celsius.