초록 ▼

A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitroge

A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.

대표청구항 ▼

[ What is claimed is:] [1.] A method of synthesizing a ternary Si.sub.x C.sub.y N.sub.z compound comprising a predominantly carbon-nitride network in crystalline form on a crystalline Si substrate, wherein the chemical composition of the ternary compound is in the range of Si: (x=) 15-20 at. %, C: (

[ What is claimed is:] [1.] A method of synthesizing a ternary Si.sub.x C.sub.y N.sub.z compound comprising a predominantly carbon-nitride network in crystalline form on a crystalline Si substrate, wherein the chemical composition of the ternary compound is in the range of Si: (x=) 15-20 at. %, C: (y=) 30-40 at. % and N: (z=) 45-55 at. %, which comprises perform ing plasma enhanced deposition of a mixture of methane, silane, nitrogen and hydrogen containing gases, at flow rates of 5-25, 0.4-0.8. 70-90 and 60-80 sccm, respectively, for said gases, wherein the substrate is held at a temperature of between 800 and 1200.degree. C. to produce said ternary crystalline compound.