초록 ▼

A process used to create a non-smooth, top surface topography, for a semiconductor substrate, needed to improve the adhesion between a protective molding compound, and the underlying top surface of the semiconductor substrate, has been developed. The process features the creation of the non-smooth,

A process used to create a non-smooth, top surface topography, for a semiconductor substrate, needed to improve the adhesion between a protective molding compound, and the underlying top surface of the semiconductor substrate, has been developed. The process features the creation of the non-smooth, top surface topography, including either: recessed, or etched back, copper damascene structures, in an insulator layer; or copper damascene structures, in a recessed, or etched back, insulator layer. The recessing of the copper damascene structures, or of the insulator layer, is accomplished via selective, dry or wet etch procedures. After formation of a gold wire bond, on the top surface of a copper damascene structure, a protective molding compound is applied, to the underlying, non-smooth, top surface topography.

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming a molding compound on a non-smooth, top surface topography, of a semiconductor substrate, comprising the steps of:forming metal damascene structures, including a wide diameter, metal damascene structure, in an insulator layer, resulting in a smooth, t

[ What is claimed is:] [1.] A method for forming a molding compound on a non-smooth, top surface topography, of a semiconductor substrate, comprising the steps of:forming metal damascene structures, including a wide diameter, metal damascene structure, in an insulator layer, resulting in a smooth, top surface topography, for said semiconductor substrate, with said smooth, top surface topography resulting from the top surface of said metal damascene structures, located at the same level as the top surface of said insulator layer;selectively removing a top portion, of said metal damascene structures, to create said non-smooth top surface topography, for said semiconductor substrate, with said non-smooth, top surface topography resulting from recessed metal damascene structures, in said insulator layer, and with the top surface of said recessed metal damascene structures, at a level below the top surface of said insulator layer;depositing a composite insulator layer on said non-smooth top surface topography;forming an opening in said composite insulator layer, exposing a portion of the top surface of said wide diameter, recessed metal damascene structure;forming a wire bond on the portion of said wide diameter, recessed metal damascene structure, exposed in said opening, in said composite insulator layer; andapplying said molding compound on said composite insulator layer, with said molding compound surrounding said wire bond.