초록 ▼

A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon sour

A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited tungsten silicide, prior to commencement of depositing tungsten silicide on active substrates in the deposition chamber.

대표청구항 ▼

[ Having thus described the invention what is claimed is:] [1.] A process for preconditioning the surfaces of a deposition chamber, after a prior cleaning step, for the subsequent deposition of tungsten silicide on an active substrate therein which comprises:a) forming a first tungsten silicide depo

[ Having thus described the invention what is claimed is:] [1.] A process for preconditioning the surfaces of a deposition chamber, after a prior cleaning step, for the subsequent deposition of tungsten silicide on an active substrate therein which comprises:a) forming a first tungsten silicide deposit, having a thickness of at least about 200 Angstroms, on said surfaces of said deposition chamber by flowing into said chamber gases comprising WF.sub.6 gas, non-chlorinated silane-based gas, and an optional carrier gas; andb) then forming a second tungsten silicide deposit, having a thickness of at least about 200 Angstroms, over said first tungsten silicide deposit by flowing into said chamber gases comprising WF.sub.6 gas, an optional carrier gas, and a chlorine-substituted silane gas selected from the group consisting of dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), and trichlorosilane (SiHCl.sub.3).