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Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/15
출원번호 US-0088222 (1998-06-01)
우선권정보 JP-0170822 (1997-06-27)
발명자 / 주소
  • Hata Toshio,JPX
  • Sugahara Satoshi,JPX
  • Hanaoka Daisuke,JPX
출원인 / 주소
  • Sharp Kabushiki Kaisha, JPX
대리인 / 주소
    Morrison & Foerster LLP
인용정보 피인용 횟수 : 65  인용 특허 : 5

초록 ▼

A gallium nitride type compound semiconductor light-emitting device of the present invention includes: a substrate; a buffer layer, formed on the substrate, having a thick region and a thin region in terms of a thickness taking a surface of the substrate as a reference level; and a semiconductor lay

대표청구항 ▼

[ What is claimed is:] [1.] A gallium nitride type compound semiconductor light-emitting device, comprising:a substrate;a buffer layer, formed on an upper surface of the substrate, having a thick region and a thin region in terms of a thickness taking the upper surface of the substrate as a referenc

이 특허에 인용된 특허 (5)

  1. Miura Yoshiki (Hyogo JPX) Matsubara Hideki (Hyogo JPX) Matsushima Masato (Hyogo JPX) Seki Hisashi (Tokyo JPX) Koukitu Akinori (Tokyo JPX), Compound semiconductor light emitting device and method of preparing the same.
    상세보기
  2. Kudo Hiroaki (Nara JPX) Inoguchi Kazuhiko (Nara JPX) Sugahara Satoshi (Nara JPX) Takiguchi Haruhisa (Nara JPX), Semiconductor device and a method for producing the same.
    상세보기
  3. Marx Diethard,JPX ; Kawazu Zempei,JPX ; Mihashi Yutaka,JPX, Semiconductor device including Gallium nitride layer.
    상세보기
  4. Ohba Yasuo,JPX ; Hatano Ako,JPX, Semiconductor device including quaternary buffer layer with pinholes.
    상세보기
  5. Hosoba Hiroyuki,JPX, Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and metho.
    상세보기

이 특허를 인용한 특허 (65)

  1. Krames, Michael Ragan; Martin, Paul Scott; Tan, Tun Sein, Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction.
    상세보기
  2. Kikkawa, Toshihide, Compound semiconductor device.
    상세보기
  3. Kikkawa, Toshihide, Compound semiconductor device.
    상세보기
  4. Kikkawa, Toshihide, Compound semiconductor device.
    상세보기
  5. Kikkawa,Toshihide, Compound semiconductor device.
    상세보기
  6. Kikkawa, Toshihide, Compound semiconductor device and method for fabricating the same.
    상세보기
  7. Kikkawa, Toshihide, Compound semiconductor device and method for fabricating the same.
    상세보기
  8. Kikkawa,Toshihide, Compound semiconductor device and method for fabricating the same.
    상세보기
  9. Imanishi, Kenji; Kikkawa, Toshihide, Compound semiconductor device and method of manufacturing the same.
    상세보기
  10. Osawa, Hiroshi; Shinohara, Hironao, GaN based semiconductor light emitting device and lamp.
    상세보기
  11. Tadatomo,Kazuyuki; Okagawa,Hiroaki; Ouchi,Yoichiro; Tsunekawa,Takashi, GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof.
    상세보기
  12. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
    상세보기
  13. Shibata, Naoki; Chiyo, Toshiaki; Senda, Masanobu; Ito, Jun; Watanabe, Hiroshi; Asami, Shinya; Asami, Shizuyo, Group III nitride compound semiconductor device.
    상세보기
  14. Uemura, Toshiya, Group III nitride compound semiconductor light emitting element, light emitting device using the light emitting element: and method for manufacturing the light emitting element.
    상세보기
  15. Haase, Michael A., LED device with re-emitting semiconductor construction and converging optical element.
    상세보기
  16. Hsieh,Min Hsun; Liu,Wen Huang, Light emitting device with a micro-reflection structure carrier.
    상세보기
  17. Nagai,Youichi; Katayama,Koji; Kitabayashi,Hiroyuki, Light emitting device, method for making the same, and nitride semiconductor substrate.
    상세보기
  18. Chiu, Kuo An; Feng, Jian; Peng, Huaijun; Chu, Hung Shen; Zheng, Shengmei, Light emitting diode device, and manufacture and use thereof.
    상세보기
  19. Bergmann, Michael J.; Driscoll, Daniel C.; Emerson, David T., Light emitting diode having undoped and unintentionally doped nitride transition layer.
    상세보기
  20. Uemura, Toshiya, Light emitting element having an irregular surface, light emitting device using the light emitting element, and method for manufacturing light emitting element.
    상세보기
  21. Ou, Chen; Yao, Chiu-Lin, Light-emitting device having a patterned surface.
    상세보기
  22. Ou, Chen; Yao, Chiu-Lin, Light-emitting device having a patterned surface.
    상세보기
  23. Ou, Chen; Yao, Chiu-Lin, Light-emitting device having a patterned surface.
    상세보기
  24. Ou, Chen; Yao, Chiu-Lin, Light-emitting device having a patterned surface.
    상세보기
  25. Ishida, Masahiro, Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer.
    상세보기
  26. Okuno, Koji, Manufacturing method of group III nitride semiconductor.
    상세보기
  27. Asai,Keiichiro; Shibata,Tomohiko; Nakamura,Yukinori; Tanaka,Mitsuhiro, Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer.
    상세보기
  28. Kamiyama, Satoshi; Amano, Hiroshi; Iwaya, Motoaki; Akasaki, Isamu; Kasugai, Hideki, Method for fabricating a semiconductor device and semiconductor device.
    상세보기
  29. Tsong Ignatius S. T. ; Smith David J. ; Torres Victor M. ; Edwards ; Jr. John L. ; Doak R. Bruce, Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices.
    상세보기
  30. Shibata, Naoki; Chiyo, Toshiaki; Senda, Masanobu; Ito, Jun; Watanabe, Hiroshi; Asami, Shinya; Asami, Shizuyo, Method for manufacturing group III nitride compound semiconductor device.
    상세보기
  31. Tsujimura, Ayumu; Hasegawa, Yoshiaki; Ishibashi, Akihiko; Kidoguchi, Isao; Ban, Yuzaburo, Method for producing semiconductor and semiconductor laser device.
    상세보기
  32. Morita,Etsuo, Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate.
    상세보기
  33. Morita,Etsuo, Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate.
    상세보기
  34. Bourret-Courchesne, Edith D., Method of growing GaN films with a low density of structural defects using an interlayer.
    상세보기
  35. Imanishi, Kenji; Kikkawa, Toshihide, Method of manufacturing compound semiconductor device.
    상세보기
  36. Matsumura, Hiroaki; Yanamono, Tomoya, Nitride semiconductor laser device having current blocking layer and method of manufacturing the same.
    상세보기
  37. Lee,Jae Hoon; Lee,Jeong Wook; Kim,Hyun Kyung; Kim,Yong Chun, Nitride semiconductor light emitting device.
    상세보기
  38. Cho, Dong Hyun; Koike, Masayoshi; Imai, Yuiji; Kim, Min Ho; Oh, Bang Won; Hahm, Hun Joo, Nitride semiconductor light-emitting device and process for producing the same.
    상세보기
  39. Hata, Masayuki; Kunisato, Tatsuya; Hayashi, Nobuhiko, Nitride-based semiconductor element and method of forming nitride-based semiconductor.
    상세보기
  40. Moustakas, Theodore D.; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua, Optical devices featuring nonpolar textured semiconductor layers.
    상세보기
  41. Moustakas, Theodore D.; Cabalu, Jasper S., Optical devices featuring textured semiconductor layers.
    상세보기
  42. Moustakas, Theodore D.; Cabalu, Jasper S., Optical devices featuring textured semiconductor layers.
    상세보기
  43. Moustakas, Theodore D.; Cabalu, Jasper S., Optical devices featuring textured semiconductor layers.
    상세보기
  44. Yoon, Yeo Jin; Seo, Won Cheol, Patterned substrate for light emitting diode and light emitting diode employing the same.
    상세보기
  45. Kim, Tae-geun; Nam, Ok-hyun, Semiconductor laser diode and method for fabricating the same.
    상세보기
  46. Cheong, Hung Seob, Semiconductor light emitting device.
    상세보기
  47. Cheong, Hung Seob, Semiconductor light emitting device.
    상세보기
  48. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  49. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  50. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  51. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  52. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  53. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  54. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  55. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  56. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  57. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light emitting device.
    상세보기
  58. Kim, Sun Woon; Kim, Hyun Kyung; Back, Hyung Ky; Han, Jae Ho, Semiconductor light emitting device having patterned substrate.
    상세보기
  59. Kim, Sun Woon; Kim, Hyun Kyung; Back, Hyung Ky; Han, Jae Ho, Semiconductor light emitting device having patterned substrate and manufacturing method of the same.
    상세보기
  60. Tanaka, Hisanori; Hosokawa, Yasunobu; Shibutani, Yuuki, Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth.
    상세보기
  61. Tanaka, Hisanori; Hosokawa, Yasunobu; Shibutani, Yuuki, Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth.
    상세보기
  62. Okabe, Takehiko, Semiconductor light emitting element with first and second electrode openings arranged at a constant distance.
    상세보기
  63. Niki, Isamu; Yamada, Motokazu; Sano, Masahiko; Shioji, Shuji, Semiconductor light-emitting device.
    상세보기
  64. Yang, Chih-Chung; Liao, Che-Hao; Ting, Shao-Ying; Chen, Horng-Shyang; Chang, Wen-Ming; Yao, Yu-Feng; Chen, Chih-Yen; Chen, Hao-Tsung, Semiconductor light-emitting device and manufacturing method thereof.
    상세보기
  65. Hirayama, Hideki, Ultraviolet light emitting diode and method for producing same.
    상세보기

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