초록 ▼

This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top s

This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.

대표청구항 ▼

[ We claim:] [1.] An integral IR detector system, said system comprising:integrated silicon or GaAs circuitry;an epitaxial lattice-match layer on a top surface of said circuitry;an epitaxial insulating layer on said lattice-match layer;at least two epitaxial HgCdTe sensors on said insulating layer,

[ We claim:] [1.] An integral IR detector system, said system comprising:integrated silicon or GaAs circuitry;an epitaxial lattice-match layer on a top surface of said circuitry;an epitaxial insulating layer on said lattice-match layer;at least two epitaxial HgCdTe sensors on said insulating layer, said HgCdTe sensors being electrically connected to said circuitry;an IR transparent, spacer layer on said HgCdTe sensors; andan HgCdTe filter on said spacer layer.