초록 ▼

In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape i

In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape is formed on the workpiece layer. The workpiece layer is dry-etched through the resist pattern serving as a mask. The resist pattern is removed. Ice particles or droplets are injected toward the wafer, thereby removing the deposit.

대표청구항 ▼

[ What is claimed is:] [1.] A post-treatment method for dry etching, comprising the steps of:forming a workpiece layer containing Pt or Ru on a wafer;forming a resist pattern having a shape on said workpiece layer;dry etching said workpiece layer through said resist pattern on a mask;removing said r

[ What is claimed is:] [1.] A post-treatment method for dry etching, comprising the steps of:forming a workpiece layer containing Pt or Ru on a wafer;forming a resist pattern having a shape on said workpiece layer;dry etching said workpiece layer through said resist pattern on a mask;removing said resist pattern;forming droplets which are made of alcohol or water containing a quaternary ammonium hydroxide and which are uniform in particle size, using a pulse jet nozzle; andjetting said droplets which are uniform in particle size toward said wafer.