초록 ▼

A method of fabricating a shallow trench isolation. A pad oxide and a dielectric layer are formed on a substrate. A trench is formed in the substrate penetrating through the pad oxide layer and the dielectric layer. The dielectric layer around the edge of the trench is removed to expose the substrat

A method of fabricating a shallow trench isolation. A pad oxide and a dielectric layer are formed on a substrate. A trench is formed in the substrate penetrating through the pad oxide layer and the dielectric layer. The dielectric layer around the edge of the trench is removed to expose the substrate. The trench is filled to form a T-shaped insulation plug.

대표청구항 ▼

[ What is claimed is:] [13.] A method of forming a shallow trench isolation, comprising:providing a substrate;sequentially forming a pad oxide layer and a dielectric layer on the substrate;removing a part of the pad oxide layer, the dielectric layer and the substrate to form a trench with a first de

[ What is claimed is:] [13.] A method of forming a shallow trench isolation, comprising:providing a substrate;sequentially forming a pad oxide layer and a dielectric layer on the substrate;removing a part of the pad oxide layer, the dielectric layer and the substrate to form a trench with a first depth in the substrate;removing a part of the dielectric layer to further expose a portion of the pad oxide layer at a periphery of the trench, wherein the substrate is also significantly and simultaneously removed when the part of the dielectric layer is removed whereby the first depth of the trench is deepened to have an intended second depth;forming a T-shaped insulation plug comprising a filling part to fill the trench and an extension part in the dielectric layer extending laterally to cover the exposed portion of the pad oxide layer at the periphery of the trench; andremoving the dielectric layer and the pad oxide layer under the dielectric layer.