초록 ▼

The invention is aimed at reducing the influence of the pollution from impurities in the wafer to improve the wafer yield on the basis of preventionof the pollution from impurities while occurrence of slip lines in the wafer is minimized to enhance the efficiency of the surface treatment of the wafe

The invention is aimed at reducing the influence of the pollution from impurities in the wafer to improve the wafer yield on the basis of preventionof the pollution from impurities while occurrence of slip lines in the wafer is minimized to enhance the efficiency of the surface treatment of the wafer loading faces of the vertical wafer board. For example, the surface of the jig for semiconductor wafers which is composed of the substrate of a high purity carbon is formed with a SiC film by the CVD method, said surface being ground by a grinding tool again formed of a SiC film. Hangover particles produced by said grinding operation are subjected to a high temperature oxydizing treatment to be dissolved thereafter. Application of this method to the vertical wafer board realizes that when n times of measurements are conducted for a length of Lmm in the range of L.times.n.gtoreq.100 mm to obtain a result that said SiC film has a maximum surface roughness Rmax. which is maintained constantly below 10 .mu.m or less in n times of measurements while the number of particles having a size of 0.1 .mu.m or more and adhering to the surface is reduced down to 10 pieces/mm.sup.2 or less. As a result, the support by an extensive plane of the wafer loading face is assured and the influence of pollution from impurities are removed and the occurrence of slip lines is minimized.

대표청구항 ▼

[ What is claimed is:] [1.] A method of producing a jig for semiconductor wafer, said jig having a wafer loading face, at least said wafer loading face being subjected to a treatment comprising the steps offorming a silicon carbide (SiC) film on a substrate for manufacturing the jig by applying a CV

[ What is claimed is:] [1.] A method of producing a jig for semiconductor wafer, said jig having a wafer loading face, at least said wafer loading face being subjected to a treatment comprising the steps offorming a silicon carbide (SiC) film on a substrate for manufacturing the jig by applying a CVD method;grinding said silicon carbide (SiC) film by means of a silicon carbide (SiC) tool to smooth the jig;heat treating said smoothed jig in a high temperature oxygen gas so as to convert silicon carbide (SiC) particles produced in said silicon carbide (SiC) forming step and adhering to the surface of the jig into silicon dioxide (SiO.sub.2) particleswashing said jig in a solution until the silicon dioxide (SiO.sub.2) particles are dissolved therein.